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EMH价格
参考价格：￥8.8435
型号：EMH 品牌：Switchcraft 备注：这里有EMH多少钱，2024年最近7天走势，今日出价，今日竞价，EMH批发/采购报价，EMH行情走势销售排行榜，EMH报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
EMH | 250 W & 350 W Forced-cooled 文件：6.79435 Mbytes Page：22 Pages | XPPOWER XP Power Limited |  |   |
EMH | 包装：散装 描述：CONN INSERT SHELL PANEL MNT 连接器，互连器件 圆形连接器外壳 | Switchcraft Switchcraft Inc. |  | |
(dual digital transistors) FEATURES •TwoDTC124Echipsinapackage. | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 |  | | |
General purpose (dual digital transistors) Features 1)TwoDTC124EchipsinaEMTorUMTorSMTpackage. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |  | | |
General purpose transistors (dual transistors) FEATURES •TwoDTC123Jchipsinapackage •MountingpossiblewithSOT-563automaticmountingmachines. •Transistorelementsareindependent,eliminatinginterference. •Mountingcostandareabecutinhalf. | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | | | |
General purpose Features 1)TwoDTC123JchipsinaEMTorUMTpackage. 2)MountingpossiblewithEMT3orUMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DRIVER | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
General purpose (dual digital transistors) Features 1)TwoDTC124EchipsinaEMTorUMTorSMTpackage. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
General purpose (dual digital transistors) Features 1)TwoDTC123JchipsinaEMTorUMTpackage. 2)MountingpossiblewithEMT3orUMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DRIVER | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
General purpose (dual digital transistors) Features 1)TwoDTC114EchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Features 1)TwoDTC114EchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
General purpose (dual digital transistors) Features 1)TwoDTC144EschipsinaEMTorUMTor SMTpackage. 2)MountingpossiblewithEMT3orUMT3or SMT3automaticmountingmachines. 3)Transistorelementsareindependent, eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFAC | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
General purpose transistors (dual transistors) Generalpurposetransistors(dualtransistors) FEATURES ●TwoDTC144Eschipinapackage ●MountingpossiblewithSOT-563automaticmountingmachines. ●Transistorelementsareindependent,eliminatinginterference. ●Mountingcostandareabecutinhalf. | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | | | |
Dual Digital Transistors (NPNNPN) DualDigitalTransistors(NPN+NPN) FEATURES ●TwoDTC144Eschipinapackage ●MountingpossiblewithSOT-563automaticmountingmachines ●Transistorelementsareindependent,eliminatinginterference ●Mountingcostandareabecutinhalf | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | | |
NPN 100mA 50V Complex Digital Transistors Features 1)TwoDTC144EschipsinaEMTorUMTor SMTpackage. 2)MountingpossiblewithEMT3orUMT3or SMT3automaticmountingmachines. 3)Transistorelementsareindependent, eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFAC | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Features 1)TwoDTC144EschipsinaEMTorUMTor SMTpackage. 2)MountingpossiblewithEMT3orUMT3or SMT3automaticmountingmachines. 3)Transistorelementsareindependent, eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFAC | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
P-Channel Silicon MOSFET General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •TheEMH2301incorporatesaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •1.8Vdrive. | SANYOSanyo 三洋三洋电机株式会社 |  | | |
P-Channel Silicon MOSFET General-Purpose Switching Device P-ChannelSiliconMOSFET General-PurposeSwitchingDeviceApplications Features •TheEMH2302incorporatesaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •4Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •TheEMH2308incorporatesaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance •Protectiondiodein | SANYOSanyo 三洋三洋电机株式会社 | | | |
P-Channel Power MOSFET Features •TheEMH2308incorporatesaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
P-Channel Power MOSFET Features •TheEMH2308incorporatesaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
General-Purpose Switching Device Applications Features •ON-resistanceRDS(on)1=28mΩ(typ.) •1.8Vdrive •Halogenfreecompliance •ProtectionDiodein | SANYOSanyo 三洋三洋电机株式会社 | | | |
Dual P-Channel Power MOSFET Features •ON-resistanceRDS(on)1=28mΩ(typ.) •Halogenfreecompliance •1.8Vdrive •ProtectionDiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Dual P-Channel Power MOSFET Features •ON-resistanceRDS(on)1=28mΩ(typ.) •Halogenfreecompliance •1.8Vdrive •ProtectionDiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •TheEMH2401incorporatesanN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •1.8Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •TheEMH2402incorporatesanN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •4Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •LowON-resistance •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •2.5Vdrive •Protectiondiodein | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Power MOSFET Features •LowON-resistance •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •2.5Vdrive •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •ON-resistanceRDS(on)1:16mΩ(typ.) •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •2.5Vdrive •Halogenfreecompliance | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Power MOSFET Features •LowON-resistance •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •2.5Vdrive •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •TheEMH2408incorporatesaN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Power MOSFET Features •TheEMH2408incorporatesaN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel Power MOSFET Features •TheEMH2408incorporatesaN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •TheEMH2409incorporatesaN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •4Vdrive •Halogenfreecompliance •Protectiondiodein | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Power MOSFET Features •TheEMH2409incorporatesaN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •4Vdrive •Halogenfreecompliance •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel Power MOSFET Features •TheEMH2409incorporatesaN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •4Vdrive •Halogenfreecompliance •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •LowON-resistance •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •2.5Vdrive •Halogenfreecompliance •Protectiondiodein | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Power MOSFET Features •LowON-resistance •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •2.5Vdrive •Halogenfreecompliance •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
General purpose (dual digital transistors) Features 1)TwoDTC143ZchipsinaEMTpackage. 2)MountingpossiblewithEMTautomaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Structure EpitaxialplanartypeNPNsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •TheEMH2601incorporatesanN-channelMOSFETandaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •1.8Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •TheEMH2602incorporatesanN-channelMOSFETandaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •4Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •TheEMH2603incorporatesanN-channelMOSFETandaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •Nch:2.5Vdrive. •Pch:1.8Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •Nch+PchMOSFET •ON-resistanceNch:RDS(on)1=34mΩ(typ.)Pch:RDS(on)1=65mΩ(typ.) •1.8Vdrive •Halogenfreecompliance | SANYOSanyo 三洋三洋电机株式会社 | | | |
Power MOSFET Features •Nch+PchMOSFET •ON-resistanceNch:RDS(on)1=34mΩ(typ.)Pch:RDS(on)1=65mΩ(typ.) •1.8Vdrive •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Power MOSFET Features •Nch+PchMOSFET •ON-resistanceNch:RDS(on)1=34mΩ(typ.)Pch:RDS(on)1=65mΩ(typ.) •1.8Vdrive •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SBD : Schottky Barrier Diode General-Purpose Switching Device Applications MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithaP-ChannelSilliconMOSFETandaSchottkyBarrierDiodecontainedinonepackagefacilitatinghigh-densitymounting •[MOSFET] •LowON-resistance •1.8Vdrive •[SBD] •Smallswitching | SANYOSanyo 三洋三洋电机株式会社 | | | |
P-Channel Power MOSFET P-ChannelPowerMOSFET –20V,–3A,85mΩ,SingleEMH8withSchottkyDiode Features •CompositetypewithaP-ChannelSilliconMOSFETandaSchottkyBarrierDiodecontainedinonepackagefacilitatinghigh-densitymounting •[MOSFET] •LowON-resistance •1.8Vdrive •[SBD] •Smal | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
P-Channel Power MOSFET P-ChannelPowerMOSFET –20V,–3A,85mΩ,SingleEMH8withSchottkyDiode Features •CompositetypewithaP-ChannelSilliconMOSFETandaSchottkyBarrierDiodecontainedinonepackagefacilitatinghigh-densitymounting •[MOSFET] •LowON-resistance •1.8Vdrive •[SBD] •Smal | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Features 1)TwoDTC144EschipsinaEMTorUMTor SMTpackage. 2)MountingpossiblewithEMT3orUMT3or SMT3automaticmountingmachines. 3)Transistorelementsareindependent, eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFAC | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
General purpose (dual digital transistors) Features 1)TwoDTC143TchipsinaEMTorUMTpackage. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
General purpose (dual digital transistors) 文件：1.21785 Mbytes Page：11 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Dual Digital Transistors (NPNNPN) 文件：6.07651 Mbytes Page：3 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | | |
General purpose (dual digital transistors) 文件：70.72 Kbytes Page：3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
General purpose (dual digital transistors) 文件：76.68 Kbytes Page：3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
General purpose (dual digital transistors) 文件：71.89 Kbytes Page：3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
General purpose (dual digital transistors) 文件：71.89 Kbytes Page：3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
General purpose (dual digital transistors) 文件：76.68 Kbytes Page：3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
General purpose (dual digital transistors) 文件：1.21785 Mbytes Page：11 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Dual Digital Transistors (NPNNPN) 文件：4.34219 Mbytes Page：3 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | | |
General purpose (dual digital transistors) 文件：119.86 Kbytes Page：3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Dual Digital Transistors 文件：366 Kbytes Page：3 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 |  | |
EMH产品属性
- 类型
描述
- 型号
EMH
- 功能描述
烙铁 .03 CHISEL TIP
- RoHS
否
- 制造商
Weller
- 产品
Soldering Stations
- 类型
Digital, Iron, Stand, Cleaner
- 瓦特
50 W
- 最大温度
+ 850 F
- 电缆类型
US Cord Included
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ/长电 |
23+ |
SOT-563 |
50000 |
原装正品 支持实单 |
|||
ON |
21+ |
EMH8 |
10000 |
只做原装,质量保证 |
|||
ROHM/罗姆 |
22+ |
SOT |
9000 |
原装正品 |
|||
ON |
13+ |
EMH8 |
2700 |
原装现货 |
|||
ON |
2023+ |
EMH8 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ROHM |
23+ |
原厂封装 |
9896 |
||||
ROHM |
22+ |
EMT6 |
64000 |
原厂原装,价格优势!13246658303 |
|||
ON |
21+ |
EMH8 |
10000 |
原装,品质保证,请来电咨询 |
|||
Murata |
19+ |
100000 |
原装正品价格优势 |
||||
ROHM |
23+ |
SOT-763 |
8560 |
受权代理!全新原装现货特价热卖! |
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