| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EMF50C02VA | N & P?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 20V ‐20V RDSON (MAX.) 45mΩ 100mΩ ID 4.8A ‐3.4A Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 |   | |
EMF50C02VA | Power MOSFETs-Complementary | EXCELLIANCE 杰力科技 | | |
Low-Frequency General-Purpose Amplifier Applications Low-Frequency General-Purpose Amplifier Applications Features • Large current capacitance. • Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance (Ron). | SANYO 三洋 | | ||
Low-Frequency General-Purpose Amplifier Applications Low-Frequency General-Purpose Amplifier Applications Features • Large current capacitance. • Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance (Ron). Ap | SANYO 三洋 | | ||
Low-Frequency General-Purpose Amplifier Applications Low-Frequency General-Purpose Amplifier Applications Features • Large current capacitance. • Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance (Ron). Ap | SANYO 三洋 | | ||
Low-Frequency General-Purpose Amplifier Applications Low-Frequency General-Purpose Amplifier Applications Features • Large current capacitance. • Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance (Ron). Ap | SANYO 三洋 | | ||
Bipolar Transistor 50V, 0.4A, Low VCE(sat) NPN Single SSFP Bipolar Transistor 50V, 0.4A, Low VCE(sat) NPN Single SSFP Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=175mΩ[IC=0.5A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Applica | ONSEMI 安森美半导体 | |
EMF50C02VA产品属性
- 类型
描述
- Channel：
Complementary-P
- BVDSS(V)：
-20
- VGS(±V)：
12
- ID(A)：
-3.4
- RDS(ON)(10V) Max.(mΩ)：
- RDS(ON)(5V) Max.(mΩ)：
- RDS(ON)(4.5V) Max.(mΩ)：
100
- RDS(ON)(2.5V) Max.(mΩ)：
135
- Qg(10V)Typ.(nC)：
- CissTyp.(pF)：
420
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EMC |
2407+ |
EDFN33 |
7750 |
原装现货!实单直说!特价! |
|||
EMC |
1918+ |
DFN5X6 |
50250 |
全新 发货1-2天 |
|||
EMC/杰力 |
25+ |
DFN-83.3X3.3 |
5000 |
全新原装正品支持含税 |
|||
EMC/杰力 |
24+ |
EDFN3X3 |
9600 |
原装现货,优势供应,支持实单! |
|||
EMC |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
EMC(杰力) |
2447 |
EDFN5x6 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
EMC |
2450+ |
EDFN3*3 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
24+ |
MLF-8 |
1941 |
|||||
EMC |
2223+ |
DFN3*3 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
EMC杰力 |
25+ |
SMD |
90000 |
全新原装现货 |
EMF50C02VA规格书下载地址
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