N & P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: N‐CH P‐CH BVDSS 20V ‐20V RDSON (MAX.) 30.5mΩ 100mΩ ID 6.5A ‐4.2A ​​​​​​​ Pb‐Free Lead Plating & Halogen Free

Power MOSFETs-Complementary

Bipolar Transistor

Bipolar Transistor 30V, 0.7A, Low VCE(sat) NPN Single CPH3 Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=330mΩ[IC=0.7A, IB=35mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Applicat

Bipolar Transistor

Bipolar Transistor 30V, 0.7A, Low VCE(sat) NPN Single CPH3 Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=330mΩ[IC=0.7A, IB=35mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Applicat

Bipolar Transistor 30V, 0.7A, Low VCE(sat) NPN Single MCPH3

Bipolar Transistor 30V, 0.7A, Low VCE(sat) NPN Single MCPH3 Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance)) : RCE(sat) typ=330mΩ [IC=0.7A, IB=35mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) • Ha

Low-Frequency General-Purpose Amplifier Applications

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Low-Frequency General-Purpose Amplifi er Applications

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