P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐100V RDSON (MAX.) 120mΩ ID ‐22A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

Power MOSFETs-P Channel

TRANSZORB® Transient Voltage Suppressors

FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Sold

TRANSZORB??TRANSIENT VOLTAGE SUPPRESSOR

Stand-off Voltage - 5.8 to 376 Volts Peak Pulse Power - 400 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated chip junction ♦ 400W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.0

Transient Voltage Suppressors

FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast response time • Low incremental surge resist

TRANSZORB® Transient Voltage Suppressors

FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Sold

Transient Voltage Suppressors

FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast response time • Low incremental surge resist