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型号 功能描述 生产厂家 企业 LOGO 操作
EMB90N08V

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 80V RDSON (MAX.) 85mΩ ID 5.2A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

EXCELLIANCE

杰力科技

EMB90N08V

Power MOSFETs-N Channel

EXCELLIANCE

杰力科技

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

EMB90N08V产品属性

  • 类型

    描述

  • Channel:

    Single N

  • BVDSS(V):

    80

  • VGS(±V):

    20

  • ID(A):

    6.5

  • RDS(ON)(10V) Max.(mΩ):

    85

  • RDS(ON)(5V) Max.(mΩ):

    110

  • RDS(ON)(4.5V) Max.(mΩ):

     

  • RDS(ON)(2.5V) Max.(mΩ):

     

  • Qg(10V)Typ.(nC):

    12

  • CissTyp.(pF):

    620

更新时间:2026-5-22 20:00:00
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