| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐35A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 |   | ||
P?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐10A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
P?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐35A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
P?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐8A Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
P?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐18A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
P?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐8.7A Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 20mΩ ID -8.7A Single P Channel MOSFET Rg 100% Tested Pb-Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
Power MOSFETs-P Channel | EXCELLIANCE 杰力科技 | | ||
Power MOSFETs-P Channel | EXCELLIANCE 杰力科技 | | ||
Power MOSFETs-P Channel | EXCELLIANCE 杰力科技 | | ||
TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM HDTMOS E-FET High Density Power FET DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery | MOTOROLA 摩托罗拉 | | ||
TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM HDTMOS E-FET High Density Power FET DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery | MOTOROLA 摩托罗拉 | | ||
Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1μA - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 defini | TSC 台湾半导体 | | ||
Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers 文件：223.89 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers 文件：139.27 Kbytes Page：2 Pages | TSC 台湾半导体 | |
EMB20P03产品属性
- 类型
描述
- Channel：
Single P
- BVDSS(V)：
-30
- VGS(±V)：
25
- ID(A)：
-35
- RDS(ON)(10V) Max.(mΩ)：
20
- RDS(ON)(5V) Max.(mΩ)：
34
- RDS(ON)(4.5V) Max.(mΩ)：
- RDS(ON)(2.5V) Max.(mΩ)：
- Qg(10V)Typ.(nC)：
20.3
- CissTyp.(pF)：
1407
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EMC/杰力 |
2026+ |
TO-251TO-252 |
5999 |
原装正品 假一罚十! |
|||
EMC/杰力 |
2511 |
TO252-2 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
EMC/杰力 |
25+ |
TO-251TO-252 |
50000 |
全新原装正品支持含税 |
|||
EXCELLIANCEMOS |
2517+ |
TO-252 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
EMC |
22+ |
TO252 |
20000 |
公司只有原装 品质保证 |
|||
EMC |
24+ |
TO252 |
6000 |
进口原装正品假一赔十,货期7-10天 |
|||
EMB |
新年份 |
TO-252 |
33288 |
原装正品现货,实单带TP来谈! |
|||
EMC |
17+ |
TO-251TO-252 |
50250 |
全新 发货1-2天 |
|||
EMC/杰力 |
24+ |
TO-252 |
21574 |
郑重承诺只做原装进口现货 |
|||
杰力科技 |
26+ |
TO252 |
86910 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
EMB20P03规格书下载地址
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- EMB1420MME/NOPB
- EMB1412
- EMB11
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- EMA-5
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DdatasheetPDF页码索引
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