N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 7mΩ ID 50A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

Power MOSFETs-N Channel

Power MOSFETs-N Channel

Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Power MOSFETs -Low Voltage MOSFET(20V~30V)

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

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OptiMOS2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt ra

OptiMOS2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt ra

N-Channel 30-V (D-S) MOSFET

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N-Channel 30-V (D-S) MOSFET

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