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型号 功能描述 生产厂家 企业 LOGO 操作
EM658160

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

EM658160

4M x 16 DDR Synchronous DRAM (SDRAM)

ETRON

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

300MHz 4M x 16 DDR synchronous DRAM (SDRAM)

ETRON

钰创科技

EM658160产品属性

  • 类型

    描述

  • 型号

    EM658160

  • 制造商

    ETRON

  • 制造商全称

    ETRON

  • 功能描述

    4M x 16 DDR Synchronous DRAM(SDRAM)

更新时间:2026-7-22 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ETRONTECH
2016+
TSOP66
1980
只做原装,假一罚十,公司可开17%增值税发票!
ETRONTE
24+
TSSOP
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ELITEMT
2026+
TSOP66
123
原装正品 假一罚十!
ETRON
04+
TSSOP
1690
全新原装进口自己库存优势
ETRON
25+
TSSOP66
15922
现货
ETRONTECH
25+
TSOP66
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
ESMT
25+23+
TSOP
39194
绝对原装正品全新进口深圳现货
ELITEMT
24+
TSOP66
123
ELITEMT
2402+
TSOP66
8324
原装正品!实单价优!
ELITEMT
05+
123
全新 发货1-2天

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