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型号 功能描述 生产厂家 企业 LOGO 操作
EM658160

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

EM658160

4M x 16 DDR Synchronous DRAM (SDRAM)

ETRON

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

ETRON

钰创科技

300MHz 4M x 16 DDR synchronous DRAM (SDRAM)

ETRON

钰创科技

EM658160产品属性

  • 类型

    描述

  • 型号

    EM658160

  • 制造商

    ETRON

  • 制造商全称

    ETRON

  • 功能描述

    4M x 16 DDR Synchronous DRAM(SDRAM)

更新时间:2026-5-22 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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一级代理 原装正品假一罚十价格优势长期供货
ELITEMT
24+
TSOP66
123
ETRONTECH
TSOP66
94
正品原装--自家现货-实单可谈
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原装正品!实单价优!
ELITEMT
05+
123
全新 发货1-2天
ELITEMT
05+
TSOP/66
123
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