型号 功能描述 生产厂家 企业 LOGO 操作
EM658160

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

Etron

钰创科技

EM658160

4M x 16 DDR Synchronous DRAM (SDRAM)

Etron

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

Etron

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

Etron

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

Etron

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

Etron

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

Etron

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

Etron

钰创科技

4M x 16 DDR Synchronous DRAM (SDRAM)

Overview The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edge

Etron

钰创科技

300MHz 4M x 16 DDR synchronous DRAM (SDRAM)

Etron

钰创科技

EM658160产品属性

  • 类型

    描述

  • 型号

    EM658160

  • 制造商

    ETRON

  • 制造商全称

    ETRON

  • 功能描述

    4M x 16 DDR Synchronous DRAM(SDRAM)

更新时间:2025-11-27 14:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EM
20+
SOP24
2960
诚信交易大量库存现货
ETRON
11+
TSSOP66
15922
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ELITEMT
05+
TSOP/66
123
原装现货海量库存欢迎咨询
ETRONTECH
25+
TSOP66
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
ELITEMT
24+
NA/
123
优势代理渠道,原装正品,可全系列订货开增值税票
ETRON
24+
TSSOP66
60000
ELITEMT
24+
TSOP/66
1068
原装现货假一罚十
ELITEMT
2402+
TSOP66
8324
原装正品!实单价优!
ETRONTECH
2016+
TSOP66
1980
只做原装,假一罚十,公司可开17%增值税发票!
ELITEMT
TSOP66
68500
一级代理 原装正品假一罚十价格优势长期供货

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