Hi-Current, 15.00 Centers

文件：1.017 Mbytes Page：1 Pages

Hi-Current, 15.00 Centers

文件：1.017 Mbytes Page：1 Pages

Hi-Current, 15.00 Centers

文件：1.017 Mbytes Page：1 Pages

Hi-Current, 15.00 Centers

文件：1.017 Mbytes Page：1 Pages

包装：散装 描述：TERM BLK 4P SIDE ENTRY 15MM PCB 连接器，互连器件 线对板

包装：盒 描述：EUROMAG EM2939 SERIES 05 POLE 连接器，互连器件 线对板

Hi-Current, 15.00 Centers

文件：1.017 Mbytes Page：1 Pages

Hi-Current, 15.00 Centers

文件：1.017 Mbytes Page：1 Pages

Hi-Current, 15.00 Centers

文件：1.017 Mbytes Page：1 Pages

Hi-Current, 15.00 Centers

文件：1.017 Mbytes Page：1 Pages

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 20V, 6.5A, RDS(ON) = 30mW @VGS = 4.5V. RDS(ON) = 43mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. -20V, -4.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 90mW @VGS = -2.5V. Lead-free plating ; R

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 20V, 6.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 43mΩ @VGS = 2.5V. ■ -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 90mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabi

18 MHz Center Frequency

文件：69.02 Kbytes Page：3 Pages

ARM9 microcontroller with CAN, LIN, and USB