型号 功能描述 生产厂家&企业 LOGO 操作
EM2939

Hi-Current, 15.00 Centers

文件:1.017 Mbytes Page:1 Pages

EATON

伊顿

Hi-Current, 15.00 Centers

文件:1.017 Mbytes Page:1 Pages

EATON

伊顿

Hi-Current, 15.00 Centers

文件:1.017 Mbytes Page:1 Pages

EATON

伊顿

Hi-Current, 15.00 Centers

文件:1.017 Mbytes Page:1 Pages

EATON

伊顿

包装:散装 描述:TERM BLK 4P SIDE ENTRY 15MM PCB 连接器,互连器件 线对板

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包装:盒 描述:EUROMAG EM2939 SERIES 05 POLE 连接器,互连器件 线对板

ETC

知名厂家

Hi-Current, 15.00 Centers

文件:1.017 Mbytes Page:1 Pages

EATON

伊顿

Hi-Current, 15.00 Centers

文件:1.017 Mbytes Page:1 Pages

EATON

伊顿

Hi-Current, 15.00 Centers

文件:1.017 Mbytes Page:1 Pages

EATON

伊顿

Hi-Current, 15.00 Centers

文件:1.017 Mbytes Page:1 Pages

EATON

伊顿

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 20V, 6.5A, RDS(ON) = 30mW @VGS = 4.5V. RDS(ON) = 43mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. -20V, -4.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 90mW @VGS = -2.5V. Lead-free plating ; R

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 20V, 6.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 43mΩ @VGS = 2.5V. ■ -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 90mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabi

CET

华瑞

18 MHz Center Frequency

文件:69.02 Kbytes Page:3 Pages

KR

KR Electronics, Inc.

ARM9 microcontroller with CAN, LIN, and USB

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更新时间:2025-8-16 12:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EMPIA
1738+
QFP-64
8529
科恒伟业!只做原装正品,假一赔十!
EMPIA
23+
QFP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
NS
2023+
T0220-5
8700
原装现货
EMPIA
20+
QFP
19570
原装优势主营型号-可开原型号增税票
EON
1922+
TSOP
9865
原装进口现货库存专业工厂研究所配单供货
EOM
23+
TSOP
5000
专注配单,只做原装进口现货
EON
2025+
TSOP
5378
全新原厂原装产品、公司现货销售
NS
24+
TO-2205
34
EON
22+
PLCC
2000
进口原装!现货库存
EOM
22+
TSSOP
8000
原装正品支持实单

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