Ethernet-to-serial Module

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LTE-A EM120K-GL

Quectel EM120K-GL is an LTE Advanced Category 12 module. Adopting the 3GPP Release 12 technology, the modulesupports a theoretical peak data rate of 600 Mbps in the downlink and a theoretical peak data rate of 150 Mbps inthe uplink. Designed in M.2 form factor, the module is compatible with Quectel • LTE-A Cat 12 module with M.2 form factor\n• Worldwide LTE-A and UMTS/ HSPA+ coverage\n• Low power mode\n• MIMO technology meets demands for data rate and link reliability in modem wireless communication systems;

4G Modules

The EM120R-GL is an LTE-A category 12  module in an M.2 form factor designed in accordance with the 3GPP Release 14 specification which supports maximum downlink rates of 600Mbps and uplink rates of 150Mbps.\n\n The EM120R-GL is designed for the global market and covers nearly all mainstream ca • Supports DFOTA\n• Supports DTMF\n• Supports MIMO\n• USB 2.0 high speed interface\n• Multi-constellation GNSS receiver;

包装：散装 描述：TERM BLOCK PLUG 12POS 7.62MM 连接器，互连器件 针座、插头和插座

包装：盒 描述：REFLECTOR MICRO 20 X 32MM 传感器，变送器 配件

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll