| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16 | NTE |   | ||
丝印代码：A5***；P-Channel 1.25-W, 1.8-V (G-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 1.8 V Rated | VISHAYVishay Siliconix 威世威世科技公司 | | ||
PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications 文件：228.09 Kbytes Page：14 Pages | NSC 国半 | | ||
PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications 文件：228.09 Kbytes Page：14 Pages | NSC 国半 | | ||
PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications 文件：228.09 Kbytes Page：14 Pages | NSC 国半 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
26+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
ELS2305RDB规格书下载地址
ELS2305RDB参数引脚图相关
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DdatasheetPDF页码索引
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