SERIAL THREE BIT PORT

Description The ELM621 is a serially controlled, three bit parallel I/O port in an 8 pin package. The high level of integration employed means that very few external components are required in order to construct a fully functional circuit with this IC. Features • Low power CMOS design -

Serial Three Bit Port

The ELM621 is a serially controlled, three bit parallel I/O port in an 8 pin package. The high level of integration employed means that very few external components are required in order to construct a fully functional circuit with this IC.\n\n The ELM621 offers several convenient features that m ·Low power CMOS design – typically 1mA\n·High speed (9600 baud) RS232 communications\n·Standard ASCII commands and responses\n·16 byte receive buffer\n·Switchable pullup resistance\n·Minimum of external components required\n·External reset input\n·High current drive outputs – up to 25 mA;

30V 高效率 升压 DC/DC转换器

ELM621LA是一个固定频率的、恒定电流方式工作的高效率升压型DC/DC转换器。 该IC 的频率在内部被设置为固定的1.3MHz。 另外，可以使用小型的表面贴装的电感器和电容器。可以在2.7V～30V的电压范围内恒定输出电压。 封装采用的是小型的TSOT-25。 • 电流模式控制\n• 过热保护功能\n• UVLO功能\n• 输入电压范围2.5V to 5.5V\n• 内部电流限制1.45A\n• 关机电流<0.1µA\n• 固定频率工作Typ.1.3MHz\n• 高効率90%\n• 封装TSOT-25;

SERIAL THREE BIT PORT

Description The ELM621 is a serially controlled, three bit parallel I/O port in an 8 pin package. The high level of integration employed means that very few external components are required in order to construct a fully functional circuit with this IC. Features • Low power CMOS design -

SERIAL THREE BIT PORT

Description The ELM621 is a serially controlled, three bit parallel I/O port in an 8 pin package. The high level of integration employed means that very few external components are required in order to construct a fully functional circuit with this IC. Features • Low power CMOS design -

High efficiency 30V step up DC/DC converter

文件：527.47 Kbytes Page：9 Pages

High efficiency 30V step up DC/DC converter

文件：527.47 Kbytes Page：9 Pages

Silicon Rectifier, General Purpose, High Voltage, Standard Recovery (Surface Mount)

Features: High Temperature Metallurgically Bonded Glass Passivated Junction High Temperature Soldering Guaranteed: +450°C/5 Seconds at Terminals. Complete Device Submersible Temperature of +260°C/10 Seconds in Solder Bath.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.