450 MHz HFM Oscillator

General Description The EL6200C is a solid state high performance laser modulation oscillator with external resistor adjustable frequency and amplitude. The EL6200C is available in the 5-pin SOT23 to enable device placement close to the laser for reduced EMI signature. Features • Small 5-pin SO

Positive Center Tapped Silicon Recitifers 30 Amp(15A per diode)

Features: Available in Standard (NTE6200 & NTE6202) and Fast (NTE6206 thru NTE6210) Recovery 250 Amps Peak One Half Cycle Surge Current Fast Recovery Types: trr= 200ns Max TO3 Type Package

8-BIT MCUs WITH A/D CONVERTER, TWO TIMERS, OSCILLATOR SAFEGUARD & SAFE RESET

INTRODUCTION The ST6200C, 01C and 03C devices are low cost members of the ST62xx 8-bit HCMOS family of microcontrollers, which is targeted at low to medium complexity applications. All ST62xx devices are based on a building block approach: a common core is surrounded by a number of on-chip periph

8-BIT MCUs WITH A/D CONVERTER, TWO TIMERS, OSCILLATOR SAFEGUARD & SAFE RESET

INTRODUCTION The ST6200C, 01C and 03C devices are low cost members of the ST62xx 8-bit HCMOS family of microcontrollers, which is targeted at low to medium complexity applications. All ST62xx devices are based on a building block approach: a common core is surrounded by a number of on-chip periph

LOW VOLTAGE 8-BIT ROM MCUs WITH A/D CONVERTER,AND 16 PINS

INTRODUCTION The ST6200C, 01C and 03C devices are low cost members of the ST62xx 8-bit HCMOS family of microcontrollers, which is targeted at low to medium complexity applications. All ST62xx devices are based on a building block approach: a common core is surrounded by a number of on-chip periph

GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package

DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 940 nm