INFRARED EMITTING DIODES (GAAS)

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Infrared Emitting Diodes(GaAlAs)

The ML-1CL3 is a high-power GaAlAs IRED mounted in a 3øceramic package. FEATURES •ø3 ceramic base •Peak emission wavelength λp = 865 nm •Wide beam angle ±53 deg . APPLICATIONS •Optical switches •Encoders •OA

Photo transistors(high sensitivity NPN silicon phototransistor mounted)

The ST-1CL3H is a high sensitivity NPN silicon phototransistor mounted in a 3ø low-cost ceramic package, designed for use as low-cost detector array in consumer and industrial applications. FEATURES • Compact (ø3 mm) • Wide angular response • Low-cost APPLICATIONS • Optical c

Photo diodes

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PHOTOTRANSISTORS

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