封装/外壳：0606（1616 公制） 包装：散装 描述：RF DIR COUPLER 1.85GHZ 0606 RF/IF，射频/中频和 RFID RF 定向耦合器

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

800MHz BAND MIXER GaAs MMIC

文件：345.58 Kbytes Page：15 Pages

10-BIT ANALOG-TO-DIGITAL CONVERTERS WITH PARALLEL OUTPUTS

文件：139.41 Kbytes Page：9 Pages