MOS管驱动芯片

EG3033 是一款高性价比三相 PMOS、NMOS 管栅极驱动专用芯片，内部集成了 LDO、死区时控制电路、欠压关断电路、闭锁电路、输出驱动电路，用于电机控制器、电源的驱动电路。电源电压范围 6V - 36V，静态功耗小于 1mA。该芯片集成 5V 输出 LDO，可为外部 MCU 等器件供电。当输入电压超过 12V 时，为了更好的匹配 P/N MOS 管，LO 输出最高电压为 11V，HO 输出最低电压为 VCC 减去 11V。LO 输出电流能力 IO+/-0.045/0.28A，HO 输出电流能力 IO+/-0.26/0.04A。 • 三相 P/N MOS 管栅极驱动\n• 电源电压输入范围 6V - 36V\n• 适应 3V - 30V 输入电压\n• 具有 VCC 欠压保护\n• 内置 5V/50mA 输出 LDO\n• 内建死区控制电路\n• 自带闭锁功能\n• LIN1/2/3 输入通道高电平有效，控制 LO 输出\n• HIN1/2/3 输入通道高电平有效，控制 HO 输出\n• 封装形式：SOP16、QFN16;

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Infrared Photodiode

Features: • High Sensitivity, High Reliability • Fast Response, High Speed Modulation • Peak Sensitivity Wavelength Compatible with Infrared Emitters • Wide Detection Area, Wide Half Angle