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EFC6604R

用于 1 节锂电子电池保护的双 N 沟道功率 MOSFET,12V,13A,9.0mΩ

This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. • 2.5V drive\n• Suites for Li-Ion battery pack protection circuit (1cell, 2cell)\n• Common-drain type\n• Best suited for Li-Ion battery pack protection circuit\n• ESD Diode-Protected Gate\n• Stronger to ESD\n• RoHS compliance\n• Environmental consideration\n• 2kV ESD HBM;

ONSEMI

安森美半导体

EFC6604R

N-Channel Power MOSFET

文件:309.02 Kbytes Page:6 Pages

ONSEMI

安森美半导体

EFC6604R

Power MOSFET

文件:506.66 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:506.66 Kbytes Page:6 Pages

ONSEMI

安森美半导体

封装/外壳:6-XFBGA 包装:管件 描述:MOSFET N-CH 24V 6A EFCP 分立半导体产品 晶体管 - FET,MOSFET - 单个

ONSEMI

安森美半导体

Power MOSFET

文件:506.66 Kbytes Page:6 Pages

ONSEMI

安森美半导体

60 W XENON FLASH LAMP SERIES

FEATURES ■ High Stability: Fluctuation (p-p) 3 Max. ■ High Input Energy: 1 J (per one flash) ■ Long Life: 8 × 107 flashes Min. ■ Short Arc: 3 mm ■ Spectral Distribution: 190 nm to 2000 nm (Sapphire glass window type) ■ High Repetition Rate Meeting TV rate: 60 Hz ■ Short flash pulse-width (

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Ultrahigh-Speed Switching Applications

N-Channel Silicon MOSFET Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.5V drive. • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

SANYO

三洋

4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

9 AMP ADJUSTABLE INTEGRATED SWITCHING REGULATOR

文件:242.23 Kbytes Page:5 Pages

TI

德州仪器

EFC6604R产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Dual Common Drain

  • V(BR)DSS Min (V):

    12

  • VGS Max (V):

    12

  • VGS(th) Max (V):

    1.3

  • ID Max (A):

    13

  • PD Max (W):

    1.6

  • RDS(on) Max @ VGS = 2.5 V(mΩ):

    Q1=Q2=17.7

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    Q1=Q2=9

  • Qg Typ @ VGS = 10 V (nC):

    29

  • Package Type:

    XFLGA-6

更新时间:2026-5-23 15:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON Semiconductor
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原厂渠道,现货配单
ON/安森美
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只做原装正品假一赔十为客户做到零风险!!
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一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON/安森美
2223+
26800
只做原装正品假一赔十为客户做到零风险
ON/安森美
2023+
SMD
8800
正品渠道现货 终端可提供BOM表配单。
ONSEMI/安森美
25+
90000
全新原装现货
ON/安森美
24+
BGA
9600
原装现货,优势供应,支持实单!
ON
23+
LCSP6
50000
全新原装正品现货,支持订货
onsemi
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi
25+
N/A
20948
样件支持,可原厂排单订货!

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