Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +28.0dBm TYPICAL OUTPUT POWER • 9.5dB TYPICAL POWER GAIN AT 12GHz • HIGH BVgd FOR 10V BIAS • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SO

Low Distortion GaAs Power FET

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Low Distortion GaAs Power FET

Low Distortion GaAs Power FET

文件：23.23 Kbytes Page：2 Pages

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SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

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... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll