Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +35.5dBm TYPICAL OUTPUT POWER • 17.5dB TYPICAL POWER GAIN AT 2GHz • 0.5 X 7200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • +35.5dBm TYPICAL OUTPUT POWER • 17.5dB TYPICAL POWER GAIN AT 2GHz • 0.5 X 7200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY •

8-12V low distortion GaAs power FET

Low Distortion GaAs Power FET

FEATURES • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE • +33.5dBm OUTPUT POWER • 17.0 dB TYPICAL POWER GAIN AT 2 GHz • 0.5x4800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFLIE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILI

Schottky barrier diode

DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection in a small SOT23 plastic SMD package. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS • Ultra high-speed switching • V

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies

NPN high-voltage transistors

DESCRIPTION NPN transistors in a SOT223 plastic package. PNP complement: BF723. FEATURES • Low feedback capacitance. APPLICATIONS • Class-B video output stages of colour television receivers • General purpose high voltage circuits.

Phase Control SCR (450-550 Amperes 2400 Volts)

Phase Control SCR 450-550 Amperes 2400 Volts Applications □ Power Supplies □ Battery Changers □ Motor Control □ VAR Generators

General Purpose Rectifier (600-1200 Amperes Average 4400 Volts)

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