Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +31.0dBm TYPICAL OUTPUT POWER • 8.5dB TYPICAL POWER GAIN FOR EFA240B AND 10.5dB FOR EFA240BV AT 12GHz • 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET•  +31.0dBm TYPICAL OUTPUT POWER\n•  8.5dB TYPICAL POWER GAIN FOR EFA240B AND 10.5dB FOR EFA240BV AT 12GHz\n•  0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE\n•  Si3N4 PASSIVATION\n•  ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +31.0dBm TYPICAL OUTPUT POWER • 8.5dB TYPICAL POWER GAIN FOR EFA240B AND 10.5dB FOR EFA240BV AT 12GHz • 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET

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AM/FM Transistor

AM/FM Transistor NPN Silicon

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

Silicon planar type

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Silicon planar type

文件：41.48 Kbytes Page：2 Pages

RF POWER TRANSISTORS NPN SILICON

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