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EFA072A

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +25.0dBm TYPICAL OUTPUT POWER • 10.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 720 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 15mA PER BIN RANGE

EXCELICS

EFA072A

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • +25.0dBm TYPICAL OUTPUT POWER • 10.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 720 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 15mA P

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EFA072A

Low Distortion GaAs Power FET

EXCELICS

LOW NOISE, JFET INPUT OPERATIONAL AMPLIFIERS

Low Noise, JFET Input Operational Amplifiers These low noise JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input device for low inpu

MOTOROLA

摩托罗拉

LOW NOISE, JFET INPUT OPERATIONAL AMPLIFIERS

Low Noise, JFET Input Operational Amplifiers These low noise JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input device for low inpu

MOTOROLA

摩托罗拉

DUAL J-FET INPUT OPERATIONAL AMPLIFIER?

文件:225.56 Kbytes Page:5 Pages

NJRC

日本无线

DUAL J-FET INPUT OPERATIONAL AMPLIFIER?

文件:225.56 Kbytes Page:5 Pages

NJRC

日本无线

DUAL J-FET INPUT OPERATIONAL AMPLIFIER?

文件:225.56 Kbytes Page:5 Pages

NJRC

日本无线

EFA072A产品属性

  • 类型

    描述

  • 型号

    EFA072A

  • 功能描述

    Low Distortion GaAs Power FET

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