Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +23.0dBm TYPICAL OUTPUT POWER • 10.5 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 10mA PER BIN RANG

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • NON-HERMETIC 100MIL METAL FLANGE PACKAGE • +23.0dBm TYPICAL OUTPUT POWER • 9.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY A

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +22.0dBm TYPICAL OUTPUT POWER • 8.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINE

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +22.0dBm TYPICAL OUTPUT POWER • 8.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RE

STATIC SEALS

 DESCRIPTION The BECA 040 profile is a polyurethane static seal for rod (inside) sealing.  APPLICATIONS Mobile machinery Injection presses Presses Standard cylinders

Fast-Acting Fuse

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POLYSTYRENE/ POLYCARBONATE ENCLOSURE ABOX 040

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Fast-Acting Fuse

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Suitable for the telecommunications industry

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