Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +18.0dBm TYPICAL OUTPUT POWER • 11.0dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.6 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz • 0.3 X 240 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIEN

6-10V low distortion GaAs power FET

1.4cm (0.55-inch) NTSC/PAL Color LCD Panel

Description The LCX024AKB is a 1.4cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. This panel provides full-color representation in NTSC/PAL mode. RGB dots are arranged in a delta pattern featuring h

Error Amplifier ICs

Erro r Amplifier ICs (SE series) SE005N Variable Voltage Detection Type Error Amplifier ICs SE-B3

HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

DESCRIPTION The VB024 is a high voltage integrated circuit made using SGS-THOMSON VIPower thecnology, with vertical current flow power darlington and logic level compatible driving circuit. The device performs the following functions: power stage for driving the primary side of the ignition coi

N-CHANNEL POWER MOSFET

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Silicon planar type

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