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EF10A10

Effciency Fast Rectifiers

文件:53.31 Kbytes Page:6 Pages

FORMOSA

美丽微半导体

EF10A10

Efficient Fast

FORMOSA

美丽微半导体

Efficient Fast

FORMOSA

美丽微半导体

Effciency Fast Rectifiers

文件:53.84 Kbytes Page:6 Pages

FORMOSA

美丽微半导体

10.0 AMP SILICON RECTIFIERS

FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability

BYTES

Schottky Barrier Diode

FEATURES * Similar to TO-220AC Case * Fully Molded Isolation * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Tj=150 °C operation

NIEC

Schottky Barrier Diode

FEATURES * Similar to TO-220AB Case * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Tj=150 °C operation

NIEC

FAST RECTIFIERS(10A,50-200V)

Ultra Fast Recovery Rectifier Diodes ULTRA FAST RECTIFIERS 10 AMPERES 50 -- 200 VOLTS

MOSPEC

统懋

Schottky Barrier Diode

文件:57.51 Kbytes Page:6 Pages

NIEC

EF10A10产品属性

  • 类型

    描述

  • VRRM(V):

    100

  • VR(V):

    100

  • IO(A):

    10

  • IFSM(A):

    100

  • VF(V) Max.:

    0.98

  • IF(A):

    10

  • IR(μA) Max:

    5

  • IR(μA)Max_VR(V):

    100

  • trr(ns)Max.@RG1:

    25

  • trr(ns)Max.@RG1_IF(A):

    0.5

  • trr(ns)Max.@RG1_IR(A):

    1

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