| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EESX1018 | EESX1018 - 透射光中断, 光晶体管, 通孔安装, 2 mm, 0.5 mm, 50 mA, 4 V The EE-SX1018 series high resolution PCB mounting transmissive Photomicrosensor with 0.5mm wide aperture. ·Compact model\n·2mm Wide slot\n·Long sensing ranges, high speed response\n·CE marked\n·Infrared LED/red LED light source element\n·Light ON/dark ON operation mode\n·1ms Maximum response time\n·Opaque/transparent detectable object; | OMRON 欧姆龙 | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. | POLYFET | |||
Power Manager Gallium Arsenide Power Rectifier Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C | MOTOROLA 摩托罗拉 | |||
Power Manager Gallium Arsenide Power Rectifier Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C | MOTOROLA 摩托罗拉 | |||
N-channel TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A | PHILIPS 飞利浦 | |||
Low-voltage dual frequency synthesizer for radio telephones GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 | PHILIPS 飞利浦 |
EESX1018产品属性
- 类型
描述
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ERIC |
2450+ |
SOD123 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
ERIS |
23+ |
SOD-323 |
50000 |
原装正品 支持实单 |
|||
INFINEON |
1826+ |
SMD |
3015 |
全新 发货1-2天 |
|||
ERIS |
24+ |
SOD-323 |
9600 |
原装现货,优势供应,支持实单! |
|||
OMR |
23+ |
原厂正规渠道 |
5000 |
专注配单,只做原装进口现货 |
|||
INFINEON/英飞凌 |
23+ |
QFN |
7000 |
||||
INFINEON/英飞凌 |
25+ |
SMD |
90000 |
全新原装现货 |
|||
ERIS |
23+ |
DFN1006 |
121212 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
26+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
INFINEON/英飞凌 |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
EESX1018规格书下载地址
EESX1018参数引脚图相关
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- EER55B
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- EER50
- EER49B
- EER49A
- EER40H
- EER40G
EESX1018数据表相关新闻
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EE-SX670,全新原装当天发货或门市自取0755-82732291.
2019-10-4
DdatasheetPDF页码索引
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