Photomicrosensor (Transmissive)

Miniature Transmissive Photomicrosensor with 2- to 8-mm Slot Width and Phototransistor Output ■ Stable sensing at temperatures as high as 95°C (EE-SX1041, EE-SX1070) ■ Compact model with a 5-mm wide slot (EE-SX1041) ■ Model with 12-mm deep and 5-mm wide slot (EE-SX1042) ■ Miniature model with

Miniature Transmissive Photomicrosensor with 2- to 8-mm Slot Width and Phototransistor Output

文件：318.46 Kbytes Page：8 Pages

Miniature Transmissive Photomicrosensor with 2- to 8-mm Slot Width and Phototransistor Output

文件：318.46 Kbytes Page：8 Pages

Photomicrosensor (Through-beam)

文件：65.269 Kbytes Page：2 Pages

封装/外壳：PCB 安装 包装：散装 描述：SENSOR OPT SLOT PHOTOTRAN PCB MT 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

微型光电传感器

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

Low-voltage dual frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3