256M bits SDRAM

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M bits SDRAM

Description\nThe EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs a • 3.3V power supply\n• Clock frequency: 133MHz (max.)\n• LVTTL interface\n• Single pulsed /RAS\n• 4 banks can operate simultaneously and independently\n• Burst read/write operation and burst read/single write operation capability\n• Programmable burst length* (BL): 1, 2, 4, 8\n• 2 variations of burs;

256M bits SDRAM

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M bits SDRAM

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M bits SDRAM WTR (Wide Temperature Range)

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M bits SDRAM

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M bits SDRAM

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M bits SDRAM WTR (Wide Temperature Range)

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M bits SDRAM WTR (Wide Temperature Range)

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M; 133MHz SDRAM

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 25 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • The plastic package has Underwriters Laboratory Flammability Classification 94V-O. • Surge overload ratings to 300 Amperes .

IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES ● Plastic Case With Heatsink For Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● The plastic package has Underwriters Laboratory Flammability Classification 94V-O

Silicon NPN Transistor High Gain Audio Amplifier

Features: • Large Current Capacity (IC = 2A) • Adoption of MBIT Process • High DC Current Gain: hFE = 800 to 3200 • Low Collector–Emitter Saturation Voltage: VCE(sat)