位置：首页 > IC中文资料第6535页 > EDI88512C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EDI88512C | 512Kx8 Monolithic SRAM, CMOS The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages are pin for pin upgrades for the single chip enable 128K x 8, the EDI88128C. Pins 1 and 30 become the higher orde | WEDC |   | |
EDI88512C | 512Kx8 Monolithic SRAM, CMOS | MICROCHIP 微芯科技 | | |
512Kx8 Monolithic SRAM, CMOS The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages are pin for pin upgrades for the single chip enable 128K x 8, the EDI88128C. Pins 1 and 30 become the higher orde | WEDC | | ||
512Kx8 Monolithic SRAM, CMOS The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages are pin for pin upgrades for the single chip enable 128K x 8, the EDI88128C. Pins 1 and 30 become the higher orde | WEDC | | ||
512Kx8 Monolithic SRAM, CMOS The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages are pin for pin upgrades for the single chip enable 128K x 8, the EDI88128C. Pins 1 and 30 become the higher orde | WEDC | | ||
512Kx8 Monolithic SRAM, CMOS The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages are pin for pin upgrades for the single chip enable 128K x 8, the EDI88128C. Pins 1 and 30 become the higher orde | WEDC | | ||
512Kx8 Monolithic SRAM, CMOS The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages are pin for pin upgrades for the single chip enable 128K x 8, the EDI88128C. Pins 1 and 30 become the higher orde | WEDC | | ||
512Kx8 Monolithic SRAM, CMOS The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages are pin for pin upgrades for the single chip enable 128K x 8, the EDI88128C. Pins 1 and 30 become the higher orde | WEDC | | ||
512Kx8 Monolithic SRAM, CMOS The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages are pin for pin upgrades for the single chip enable 128K x 8, the EDI88128C. Pins 1 and 30 become the higher orde | WEDC | | ||
512Kx8 Monolithic SRAM, CMOS The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages are pin for pin upgrades for the single chip enable 128K x 8, the EDI88128C. Pins 1 and 30 become the higher orde | WEDC | | ||
100ns; 5V power supply; 512K x 8 monolithic SRAM CMOS | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 | WEDC | | ||
512Kx8 Plastic Monolithic SRAM CMOS 文件：194.47 Kbytes Page：7 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Plastic Monolithic SRAM CMOS 文件：194.47 Kbytes Page：7 Pages | WEDC | | ||
512Kx8 Plastic Monolithic SRAM CMOS 文件：194.47 Kbytes Page：7 Pages | WEDC | | ||
512Kx8 Plastic Monolithic SRAM CMOS 文件：194.47 Kbytes Page：7 Pages | WEDC | | ||
512Kx8 Plastic Monolithic SRAM CMOS 文件：194.47 Kbytes Page：7 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, SMD 5962-95600 文件：183.22 Kbytes Page：9 Pages | WEDC | | ||
512Kx8 Monolithic SRAM, CMOS The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages are pin for pin upgrades for the single chip enable 128K x 8, the EDI88128C. Pins 1 and 30 become the higher orde | WEDC | |
EDI88512C产品属性
- 类型
描述
- 型号
EDI88512C
- 制造商
WEDC
- 制造商全称
White Electronic Designs Corporation
- 功能描述
512Kx8 Monolithic SRAM, CMOS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WEDC |
24+ |
SOP |
200 |
进口原装正品优势供应 |
|||
EDI |
22+ |
原厂原封 |
5000 |
全新原装现货!自家库存! |
|||
CDIP32 |
35 |
专营CAN铁帽CDIP |
|||||
WEDC |
24+ |
SOP |
1500 |
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航 |
|||
WEDC |
0804+ |
33 |
全新 发货1-2天 |
||||
原厂 |
2540+ |
AUCDIP |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
EDI |
24+ |
DIP |
3000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
XILINX/赛灵思 |
2025+ |
N/A |
2000 |
原装原厂发货7-15工作日 |
|||
WEDC |
25+ |
SOJ32 |
130 |
原厂原装,价格优势 |
|||
WEDC |
23+ |
CSOJ-36 |
500 |
原装正品,假一罚十 |
EDI88512C芯片相关品牌
EDI88512C规格书下载地址
EDI88512C参数引脚图相关
- foxconn
- fml22s
- flotherm
- finder继电器
- fc114
- fangtek
- f83
- f411
- f4031
- f338
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDS5-70
- EDS5-69
- EDS4100
- EDS3-1I
- EDS-316
- EDS-309
- EDS-305
- EDS2-9B
- EDS2838
- EDS2836
- EDS2-1G
- EDS2-17
- EDS-208
- EDS-205
- EDR-810
- EDR-75
- EDR-150
- EDR-120
- ED-PT
- EDJ4G0
- EDI88512CA/LPA-N36
- EDI88512CA/LPA-N
- EDI88512CA/LPA-K
- EDI88512CA/LPA-F36
- EDI88512CA/LPA-F32
- EDI88512CA/LPA-C
- EDI88512CA/LPA-B32
- EDI88512CA
- EDI88512C85NI
- EDI88512C85NB
- EDI88512C85CI
- EDI88512C85CB
- EDI88512C70NI
- EDI88512C70NB
- EDI88512C70CI
- EDI88512C70CB
- EDI88512C120NB
- EDI88512C120CB
- EDI88512C/LP-N
- EDI88512C/LP-C
- EDI8833P
- EDI8833LP
- EDI8833C
- EDI8832LP85QB
- EDI8832LP85LB
- EDI8832LP85CB
- EDI8832LP70QB
- EDI8832LP70LB
- EDI8832LP70CB
- EDI8832LP150QB
- EDI8832LP150LB
- EDI8832LP150CB
- EDI8832LP120QB
- EDI8832LP120LB
- EDI8832LP120CB
- EDI8832LP100QB
- EDI8832LP100LB
- EDI8832LP100CB
- EDI8832C85QB
- EDI8832C85LB
- EDGSC1
- EDGSC0
- EDGEAI
- EDGE819
- EDGE818
- EDGE749
- EDGE737
- EDGE710
- EDGE693
- EDGE692
- EDGE649
- EDGE647
- EDGE646
- EDGE629
- EDGE211
- EDGE142
- EDGE118
- EDGAC1
- EDGAC0
- EDG0408
EDI88512C数据表相关新闻
EDU36311A/OEM/903
EDU36311A/OEM/903
2022-12-1ECS-RTC-3225-5699C3 低功耗I2C RTC
ECS 具有内部 TCXO 的 I2C RTC 具有温度传感器和温度补偿电路，可确保时钟精度
2022-8-18EDS102SZ
EDS102SZ,当天发货0755-82732291全新原装现货或门市自取.
2020-8-9EDZVT2R3.0B：ROHM，SOD-52380K原装现货
EDZVT2R3.0B 品牌： ROHM 封装： SOD-523 数量： 80K 原装现货
2019-11-11EDC和EDS系列纽扣电池超级电容器EDC155Z5R5H
Cornell Dubilier的超级电容器可提供高电容，高电压，低ESR和紧凑的尺寸
2019-9-24EDF8164A3MA-CD-F-R有货的
EDF8164A3MA-CD-F-R要买就找我吧
2019-7-8
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
- P110
