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型号	功能描述	生产厂家企业	LOGO
EDI88128LPSXCB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXCC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXCI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXCM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXFB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXFC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXFI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXFM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXLB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXLC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXLI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXLM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXNB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXNC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXNI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXNM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXTB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXTC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXTI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXTM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXZB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXZC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXZI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPSXZM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128LPXCB	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128LPXCC	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128LPXCI	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128LPXCM	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128LPXNB	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128LPXNC	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128LPXNI	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128LPXNM	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CDXLM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXTB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC

EDI88128LP产品属性

类型
描述
型号
EDI88128LP
功能描述
128K X 8 STATIC RAM CMOS MONOLITHIC

EDI88128LP供应商更多...

更新时间：2026-8-3 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	EDI2BB.AL.K939977	INTEL	25+	N/A	6895	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市高捷芯城科技有限公司	EDI2BB.AL.K939977	INTEL	25+	N/A	6843	样件支持,可原厂排单订货!	询价
深圳市纳艾斯科技有限公司	EDI411024C100ZB	EDI	24+	SOLT20	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市毅创弘电子科技有限公司	EDI44256C-150BS	EDI	24+	CDIP	66800	原厂授权一级代理,专注汽车、医疗、工业、新能源！	询价
深圳市科恒伟业电子有限公司	EDI81256C35LI	原厂	2540+	LCC	6852	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市达恩科技有限公司	EDI44256C-150BS	EDI	24+	CDIP	200	进口原装正品优势供应	询价
标准国际(香港)有限公司	EDI188130C100CB	EDI188130C100CB	25+	17	17		询价
深圳市赛特兴科技有限公司	EDI441024C80LZI	EDI	QQ咨询	ZIP	111	全新原装研究所指定供货商	询价
深圳市能元时代电子有限公司	EDI1016B-G	DEI	23+	PLCC44	68911	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
谛辉(北京/上海/青岛 )电子科技有限公司	EDI1016B	EDI	26+	DIP-20P	890000	一级总代理商原厂原装大批量现货一站式服务	询价

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找IC，尽在114IC

EDI88128LP产品属性

EDI88128LP供应商更多...

EDI88128LP芯片相关品牌

EDI88128LP规格书下载地址

EDI88128LP参数引脚图相关

EDI88128LP数据表相关新闻

EDU36311A/OEM/903

ECS-RTC-3225-5699C3 低功耗I2C RTC

EDS102SZ

EDZVT2R3.0B：ROHM，SOD-52380K原装现货

EDC和EDS系列纽扣电池超级电容器EDC155Z5R5H

EDF8164A3MA-CD-F-R有货的

DdatasheetPDF页码索引