1G bits DDR2 SDRAM

EDE1108AJBG (128M words ×8 bits) EDE1116AJBG (64M words ×16 bits) Features • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS an

1G bits DDR2 SDRAM

EDE1108AJBG (128M words ×8 bits)\nEDE1116AJBG (64M words ×16 bits) • Double-data-rate architecture; two data transfers per clock cycle\n• The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture\n• Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver\n• DQS is edge-;

1G bits DDR2 SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the rec

1G bits DDR2 SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the rec

1G bits DDR2 SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the rec

1G bits DDR2 SDRAM

• Double-data-rate architecture; two data transfers per clock cycle\n• The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture\n• Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at\nthe receiver\n• DQS is edge;

1G bits DDR2 SDRAM

EDE1108AJBG (128M words ×8 bits) EDE1116AJBG (64M words ×16 bits) Features • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS an

1G bits DDR2 SDRAM

EDE1108AJBG (128M words ×8 bits) EDE1116AJBG (64M words ×16 bits) Features • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS an

1G bits DDR2 SDRAM

文件：644.84 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：644.84 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：644.84 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：644.84 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：816.02 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：816.02 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：816.02 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：816.02 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：819.76 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：819.76 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：819.76 Kbytes Page：82 Pages

1G bits DDR2 SDRAM WTR (Wide Temperature Range)

文件：756.47 Kbytes Page：75 Pages

1G bits DDR2 SDRAM

文件：819.76 Kbytes Page：82 Pages

1G bits DDR2 SDRAM WTR (Wide Temperature Range)

文件：756.47 Kbytes Page：75 Pages

1G bits DDR2 SDRAM

文件：631.34 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

文件：631.34 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

文件：631.34 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

文件：785.51 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

文件：785.51 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

文件：785.51 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

文件：785.51 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

文件：785.51 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

文件：801.03 Kbytes Page：77 Pages

1G bits DDR2 SDRAM

1G bits DDR2 SDRAM

文件：801.03 Kbytes Page：77 Pages

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boa

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boa

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection is brought out allowing conventional transistor biasing. These devices are s

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● UN1116 × 2

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.