1G bits DDR2 SDRAM

EDE1108AJBG (128M words ×8 bits) EDE1116AJBG (64M words ×16 bits) Features • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS an

1G bits DDR2 SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the rec

1G bits DDR2 SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the rec

1G bits DDR2 SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the rec

1G bits DDR2 SDRAM

EDE1108AJBG (128M words ×8 bits) EDE1116AJBG (64M words ×16 bits) Features • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS an

1G bits DDR2 SDRAM

EDE1108AJBG (128M words ×8 bits) EDE1116AJBG (64M words ×16 bits) Features • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS an

1G bits DDR2 SDRAM

文件：644.84 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：644.84 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：644.84 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：644.84 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：816.02 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：816.02 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：816.02 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：816.02 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：819.76 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：819.76 Kbytes Page：82 Pages

1G bits DDR2 SDRAM

文件：819.76 Kbytes Page：82 Pages

1G bits DDR2 SDRAM WTR (Wide Temperature Range)

文件：756.47 Kbytes Page：75 Pages

1G bits DDR2 SDRAM

文件：819.76 Kbytes Page：82 Pages

1G bits DDR2 SDRAM WTR (Wide Temperature Range)

文件：756.47 Kbytes Page：75 Pages

1G bits DDR2 SDRAM

文件：631.34 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

文件：631.34 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

文件：631.34 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

文件：785.51 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

文件：785.51 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

文件：785.51 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

文件：785.51 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

文件：785.51 Kbytes Page：78 Pages

1G bits DDR2 SDRAM

1G bits DDR2 SDRAM

1G bits DDR2 SDRAM

1G bits DDR2 SDRAM

文件：801.03 Kbytes Page：77 Pages

1G bits DDR2 SDRAM

文件：801.03 Kbytes Page：77 Pages

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 30 (7/38) AWG Tinned Copper 0.012 b) Insulation 0.010 Wall, Nom. PVC 0.032 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 2 RED 3 WHITE 2) Cable Assembly 3 Components Cabled a) Twists: 40.0

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 30 (7/38) AWG Tinned Copper 0.012 b) Insulation 0.010 Wall, Nom. PVC 0.032 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 2 RED 3 WHITE 2) Cable Assembly 3 Components Cabled a) Twists: 40.0

Type KX Thermocouple, 1 Pr #16 Sol, FEP Ins Yel, Red, OS, Yellow FEP Jkt,300V PLTC CL2P 200C SUN RES

Product Description Type KX Thermocouple, 1 Pair 16AWG (Solid) Chromel+Alumel, FEP Insulation Yel, Red Color Code, Overall Beldfoil® Shield, Yellow FEP Outer Jacket, PLTC CL2P 200C SUN RES

SILICON TRANSISTORS

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A • Complementary transistor

Drywall Punch

文件：1.8415 Mbytes Page：16 Pages