1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (µBGA) package. Features • Power supply: VDD, VDDQ = 1.8V

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (µBGA) package. Features • Power supply: VDD, VDDQ = 1.8V

1G bits DDR2 SDRAM

Description\nThe EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks.\nThe EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (µBGA) package. • Power supply: VDD, VDDQ = 1.8V ± 0.1V\n• Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver\n• Differential clock inputs (CK and /CK)\n• Commands entered on each positive CK edge: data and data mask referenced to ;

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (µBGA) package. Features • Power supply: VDD, VDDQ = 1.8V

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (µBGA) package. Features • Power supply: VDD, VDDQ = 1.8V

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 2900 V Mean forward current 1680 A Surge current 17.9 kA

Integrated Circuit Wide and Narrow Band Amp, FM/IF Limiter

Applications: • For FM IF Amplifier • For TV SIF Amplifier

DOLBY PRO LOGIC SURROUND DECODER

文件：84.44 Kbytes Page：6 Pages

Cost effective battery monitor and fast charge IC for NiCd and NiMH chargers

文件：119.95 Kbytes Page：16 Pages

Cost effective battery monitor and fast charge IC for NiCd and NiMH chargers

文件：119.95 Kbytes Page：16 Pages