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EDE价格
参考价格：￥0.0000
型号：EDE5104AESK-5C-E 品牌：Elpida Memory Inc 备注：这里有EDE多少钱，2024年最近7天走势，今日出价，今日竞价，EDE批发/采购报价，EDE行情走势销售排行榜，EDE报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Description TheEDE1104AASEisa1GbitsDDR2SDRAMorganizedas33,554,432words×4bits×8banks. TheEDE1108AASEisa1GbitsDDR2SDRAMorganizedas16,777,216words×8bits×8banks.Theyarepackagedin68-ballFBGA(µBGA)package. Features •Powersupply:VDD,VDDQ=1.8V | ELPIDAElpida Memory 美光科技美光科技股份有限公司 |  |   | |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Description TheEDE1104AASEisa1GbitsDDR2SDRAMorganizedas33,554,432words×4bits×8banks. TheEDE1108AASEisa1GbitsDDR2SDRAMorganizedas16,777,216words×8bits×8banks.Theyarepackagedin68-ballFBGA(µBGA)package. Features •Powersupply:VDD,VDDQ=1.8V | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Description TheEDE1104AASEisa1GbitsDDR2SDRAMorganizedas33,554,432words×4bits×8banks. TheEDE1108AASEisa1GbitsDDR2SDRAMorganizedas16,777,216words×8bits×8banks.Theyarepackagedin68-ballFBGA(µBGA)package. Features •Powersupply:VDD,VDDQ=1.8V | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Description TheEDE1104AASEisa1GbitsDDR2SDRAMorganizedas33,554,432words×4bits×8banks. TheEDE1108AASEisa1GbitsDDR2SDRAMorganizedas16,777,216words×8bits×8banks.Theyarepackagedin68-ballFBGA(µBGA)package. Features •Powersupply:VDD,VDDQ=1.8V | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Description TheEDE1104AASEisa1GbitsDDR2SDRAMorganizedas33,554,432words×4bits×8banks. TheEDE1108AASEisa1GbitsDDR2SDRAMorganizedas16,777,216words×8bits×8banks.Theyarepackagedin68-ballFBGA(µBGA)package. Features •Powersupply:VDD,VDDQ=1.8V | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Description TheEDE1104AASEisa1GbitsDDR2SDRAMorganizedas33,554,432words×4bits×8banks. TheEDE1108AASEisa1GbitsDDR2SDRAMorganizedas16,777,216words×8bits×8banks.Theyarepackagedin68-ballFBGA(µBGA)package. Features •Powersupply:VDD,VDDQ=1.8V | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Description TheEDE1104AASEisa1GbitsDDR2SDRAMorganizedas33,554,432words×4bits×8banks. TheEDE1108AASEisa1GbitsDDR2SDRAMorganizedas16,777,216words×8bits×8banks.Theyarepackagedin68-ballFBGA(µBGA)package. Features •Powersupply:VDD,VDDQ=1.8V | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Description TheEDE1104AASEisa1GbitsDDR2SDRAMorganizedas33,554,432words×4bits×8banks. TheEDE1108AASEisa1GbitsDDR2SDRAMorganizedas16,777,216words×8bits×8banks.Theyarepackagedin68-ballFBGA(µBGA)package. Features •Powersupply:VDD,VDDQ=1.8V | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM EDE1108AJBG(128Mwords×8bits) EDE1116AJBG(64Mwords×16bits) Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Thehigh-speeddatatransferisrealizedbythe4bitsprefetchpipelinedarchitecture •Bi-directionaldifferentialdatastrobe(DQSan | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM EDE1108AJBG(128Mwords×8bits) EDE1116AJBG(64Mwords×16bits) Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Thehigh-speeddatatransferisrealizedbythe4bitsprefetchpipelinedarchitecture •Bi-directionaldifferentialdatastrobe(DQSan | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Thehigh-speeddatatransferisrealizedbythe4bitsprefetchpipelinedarchitecture •Bi-directionaldifferentialdatastrobe(DQSand/DQS)istransmitted/receivedwithdataforcapturingdataat therec | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Thehigh-speeddatatransferisrealizedbythe4bitsprefetchpipelinedarchitecture •Bi-directionaldifferentialdatastrobe(DQSand/DQS)istransmitted/receivedwithdataforcapturingdataat therec | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Thehigh-speeddatatransferisrealizedbythe4bitsprefetchpipelinedarchitecture •Bi-directionaldifferentialdatastrobe(DQSand/DQS)istransmitted/receivedwithdataforcapturingdataat therec | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Thehigh-speeddatatransferisrealizedbythe4bitsprefetchpipelinedarchitecture •Bi-directionaldifferentialdatastrobe(DQSand/DQS)istransmitted/receivedwithdataforcapturingdataat therec | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM EDE1108AJBG(128Mwords×8bits) EDE1116AJBG(64Mwords×16bits) Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Thehigh-speeddatatransferisrealizedbythe4bitsprefetchpipelinedarchitecture •Bi-directionaldifferentialdatastrobe(DQSan | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM EDE1108AJBG(128Mwords×8bits) EDE1116AJBG(64Mwords×16bits) Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Thehigh-speeddatatransferisrealizedbythe4bitsprefetchpipelinedarchitecture •Bi-directionaldifferentialdatastrobe(DQSan | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM EDE1108AJBG(128Mwords×8bits) EDE1116AJBG(64Mwords×16bits) Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Thehigh-speeddatatransferisrealizedbythe4bitsprefetchpipelinedarchitecture •Bi-directionaldifferentialdatastrobe(DQSan | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Thehigh-speeddatatransferisrealizedbythe4bitsprefetchpipelinedarchitecture •Bi-directionaldifferentialdatastrobe(DQSand/DQS)istransmitted/receivedwithdataforcapturingdataat therec | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Thehigh-speeddatatransferisrealizedbythe4bitsprefetchpipelinedarchitecture •Bi-directionaldifferentialdatastrobe(DQSand/DQS)istransmitted/receivedwithdataforcapturingdataat therec | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Thehigh-speeddatatransferisrealizedbythe4bitsprefetchpipelinedarchitecture •Bi-directionaldifferentialdatastrobe(DQSand/DQS)istransmitted/receivedwithdataforcapturingdataat therec | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM EDE1108AJBG(128Mwords×8bits) EDE1116AJBG(64Mwords×16bits) Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Thehigh-speeddatatransferisrealizedbythe4bitsprefetchpipelinedarchitecture •Bi-directionaldifferentialdatastrobe(DQSan | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM EDE1108AJBG(128Mwords×8bits) EDE1116AJBG(64Mwords×16bits) Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Thehigh-speeddatatransferisrealizedbythe4bitsprefetchpipelinedarchitecture •Bi-directionaldifferentialdatastrobe(DQSan | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
Keypad Encoder IC [E-LabDigitalEngineering,Inc.] TheEDE1144KeypadEncoderICisdesignedtointerfaceamatrix-type4rowx4column(16keyorless)keypadtoamicrocontrollerorotherhostprocessor.Aone-wireserialorfour-wireparallelinterfacereturnsthekeypressdataandcanbeusedinconjunction | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
Keypad Encoder IC [E-LabDigitalEngineering,Inc.] TheEDE1144KeypadEncoderICisdesignedtointerfaceamatrix-type4rowx4column(16keyorless)keypadtoamicrocontrollerorotherhostprocessor.Aone-wireserialorfour-wireparallelinterfacereturnsthekeypressdataandcanbeusedinconjunction | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
Bi-Polar Stepper Motor IC [DigitalEngineering,Inc.} TheEDE1204Bi-PolarStepperMotorICisa5volt,18pinpackagedesignedtocontrolaBi-Polar(4wire)steppermotor.TheEDE1204iscapableofself-clockinginthefree-standingRUNmode,aswellasexternalclockingintheSTEPmode.Inaddition,half-stepping | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | | |
BI-POLAR CHOPPER STEPPER MOTOR CONTROL MODULE [E-LabDigitalEngineering,Inc.] Overview TheEDE12400steppermotorcontrolmoduleoffersdesignersacompact,reliablesteppermotorcontrolsystem.Engineeredwithinternalandexternalheatsinksandahighlythermallyconductivepottingcompound,theneedforcoolingfans(knownforshortl | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | | |
EDE300 Parallel/ Serial Transceiver IC [E-LabDigitalEngineering,Inc.] EDE300Parallel/SerialTransceiverIC TheEDE300Parallel/SerialTransceiverICisa5volt,18pinpackagedesignedtoconvenientlyconvert8-bitparalleldataintoserialformatandvice-versa.TheEDE300isidealforloggingdatatoaPC,controllinghardwa | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | | |
512M bits DDR-II SDRAM Description TheEDE5104GBisa512MbitsDDR-IISDRAMorganizedas33,554,432words×4bits×4banks. TheEDE5108GBisa512MbitsDDR-IISDRAMorganizedas16,777,216words×8bits×4banks.Itpackagedin64-ballµBGA®package. Features •1.8Vpowersupply •Double-data-ratearchitectur | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
512M bits DDR-II SDRAM Description TheEDE5104GBisa512MbitsDDR-IISDRAMorganizedas33,554,432words×4bits×4banks. TheEDE5108GBisa512MbitsDDR-IISDRAMorganizedas16,777,216words×8bits×4banks.Itpackagedin64-ballµBGA®package. Features •1.8Vpowersupply •Double-data-ratearchitectur | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
512M bits DDR-II SDRAM Description TheEDE5104GBisa512MbitsDDR-IISDRAMorganizedas33,554,432words×4bits×4banks. TheEDE5108GBisa512MbitsDDR-IISDRAMorganizedas16,777,216words×8bits×4banks.Itpackagedin64-ballµBGA®package. Features •1.8Vpowersupply •Double-data-ratearchitectur | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
512M bits DDR-II SDRAM Description TheEDE5104GBisa512MbitsDDR-IISDRAMorganizedas33,554,432words×4bits×4banks. TheEDE5108GBisa512MbitsDDR-IISDRAMorganizedas16,777,216words×8bits×4banks.Itpackagedin64-ballµBGA®package. Features •1.8Vpowersupply •Double-data-ratearchitectur | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
512M bits DDR-II SDRAM Description TheEDE5104GBisa512MbitsDDR-IISDRAMorganizedas33,554,432words×4bits×4banks. TheEDE5108GBisa512MbitsDDR-IISDRAMorganizedas16,777,216words×8bits×4banks.Itpackagedin64-ballµBGA®package. Features •1.8Vpowersupply •Double-data-ratearchitectur | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
512M bits DDR-II SDRAM Description TheEDE5104GBisa512MbitsDDR-IISDRAMorganizedas33,554,432words×4bits×4banks. TheEDE5108GBisa512MbitsDDR-IISDRAMorganizedas16,777,216words×8bits×4banks.Itpackagedin64-ballµBGA®package. Features •1.8Vpowersupply •Double-data-ratearchitectur | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
512M bits DDR-II SDRAM Description TheEDE5104GBisa512MbitsDDR-IISDRAMorganizedas33,554,432words×4bits×4banks. TheEDE5108GBisa512MbitsDDR-IISDRAMorganizedas16,777,216words×8bits×4banks.Itpackagedin64-ballµBGA®package. Features •1.8Vpowersupply •Double-data-ratearchitectur | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
512M bits DDR-II SDRAM Description TheEDE5104GBisa512MbitsDDR-IISDRAMorganizedas33,554,432words×4bits×4banks. TheEDE5108GBisa512MbitsDDR-IISDRAMorganizedas16,777,216words×8bits×4banks.Itpackagedin64-ballµBGA®package. Features •1.8Vpowersupply •Double-data-ratearchitectur | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
512M bits DDR-II SDRAM Description TheEDE5104GBisa512MbitsDDR-IISDRAMorganizedas33,554,432words×4bits×4banks. TheEDE5108GBisa512MbitsDDR-IISDRAMorganizedas16,777,216words×8bits×4banks.Itpackagedin64-ballµBGA®package. Features •1.8Vpowersupply •Double-data-ratearchitectur | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
ED & EDM Domes Features •Shorttravel •Goodtactilefeedback •Selfcleaning •3actuationforces •RoHS | CK-COMPONENTS C&K Components |  | | |
1G bits DDR2 SDRAM 文件：644.84 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：644.84 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：644.84 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：644.84 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：644.84 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：644.84 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：816.02 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：816.02 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：816.02 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：816.02 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：819.76 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：819.76 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：819.76 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：819.76 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：658.71 Kbytes Page：78 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：658.71 Kbytes Page：78 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：658.71 Kbytes Page：78 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：658.71 Kbytes Page：78 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：644.84 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：644.84 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：644.84 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：644.84 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
1G bits DDR2 SDRAM 文件：644.84 Kbytes Page：82 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | |
EDE产品属性
- 类型
描述
- 型号
EDE
- 功能描述
D-Sub标准连接器 D-SUB
- RoHS
否
- 制造商
Omron Electronics
- 位置/触点数量
9
- 排数
2
- 型式
Female
- 安装风格
Through Hole
- 安装角
Right
- 端接类型
Solder
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ELPIDAMEMORYINC |
23+ |
NA |
646 |
专做原装正品,假一罚百! |
|||
ELPIDA |
19+ |
BGA |
17580 |
进口原装现货 |
|||
ELPIDA |
BGA |
150 |
|||||
ELPIDA |
2022 |
BGA |
2058 |
原厂原装正品,价格超越代理 |
|||
EPD |
1535+ |
360 |
|||||
ELPIDA |
2023+ |
BGA |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
ELPIDA |
2021+ |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ELPIDA |
23+ |
BGA |
65644 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
ELPIDA |
23+ |
FBGA |
8890 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
|||
ELPIDA |
2019 |
BGA |
55000 |
专营原装正品现货 |
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ECS-96SMF21A30
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ECS具有内部TCXO的I2CRTC具有温度传感器和温度补偿电路，可确保时钟精度
2022-8-18EDS102SZ
EDS102SZ,当天发货0755-82732291全新原装现货或门市自取.
2020-8-9EDC和EDS系列纽扣电池超级电容器EDC155Z5R5H
CornellDubilier的超级电容器可提供高电容，高电压，低ESR和紧凑的尺寸
2019-9-24EDF8164A3MA-CD-F-R有货的
EDF8164A3MA-CD-F-R要买就找我吧
2019-7-8
DdatasheetPDF页码索引
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