512M bits DDR SDRAM

文件：469.03 Kbytes Page：49 Pages

512M bits DDR SDRAM

文件：555.75 Kbytes Page：48 Pages

512M bits DDR SDRAM WTR (Wide Temperature Range)

文件：571.2 Kbytes Page：48 Pages

512M bits DDR SDRAM WTR (Wide Temperature Range)

512M bits DDR SDRAM

文件：469.03 Kbytes Page：49 Pages

512M bits DDR SDRAM

文件：568.3 Kbytes Page：49 Pages

512M bits DDR SDRAM

文件：469.03 Kbytes Page：49 Pages

512M bits DDR SDRAM

文件：568.3 Kbytes Page：49 Pages

512M bits DDR SDRAM WTR (Wide Temperature Range)

文件：582.33 Kbytes Page：49 Pages

512M bits DDR SDRAM WTR (Wide Temperature Range)

文件：583.33 Kbytes Page：49 Pages

512M bits DDR SDRAM

文件：469.03 Kbytes Page：49 Pages

512M bits DDR SDRAM

文件：568.3 Kbytes Page：49 Pages

512M bits DDR SDRAM

文件：469.03 Kbytes Page：49 Pages

512M bits DDR SDRAM

文件：568.3 Kbytes Page：49 Pages

512M bits DDR SDRAM WTR (Wide Temperature Range)

文件：582.33 Kbytes Page：49 Pages

512M bits DDR SDRAM WTR (Wide Temperature Range)

文件：583.33 Kbytes Page：49 Pages

512M bits DDR SDRAM

文件：469.03 Kbytes Page：49 Pages

512M bits DDR SDRAM

文件：568.3 Kbytes Page：49 Pages

512M bits DDR SDRAM

文件：469.03 Kbytes Page：49 Pages

512M bits DDR SDRAM

文件：568.3 Kbytes Page：49 Pages

512M bits DDR SDRAM WTR (Wide Temperature Range)

文件：583.33 Kbytes Page：49 Pages

512M bits DDR SDRAM

文件：568.3 Kbytes Page：49 Pages

512M bits DDR SDRAM WTR (Wide Temperature Range)

文件：582.33 Kbytes Page：49 Pages

512M bits DDR SDRAM WTR (Wide Temperature Range)

文件：583.33 Kbytes Page：49 Pages

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption:

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption:

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116S is a static RAM organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It operates at a low supply voltage of 3 V ±10. FEATURES • 2,048 × 8 bit organization • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (

5 CHANNELS VIDEO SWITCH

5 CHANNELS VIDEO SWITCH ■ EACH CHANNEL EXCEPT FAST BLANKING HAS 6dB GAIN ■ R, G, B AND VIDEO SIGNALS ARE CLAMPED TO THESAME REFERENCE VOLTAGEIN ORDER TO HAVE NO OUTPUT DIFFERENTIAL VOLTAGE WHEN SWITCHING ■ ALL INPUT LEVELS COMPATIBLE WITH NFC 92250 AND EN 50049 NORMS ■ 30MHz BAND WIDTH FOR R,

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape/ magazine packing