256M bits DDR SDRAM (64M words x 4 bits)

文件：441.61 Kbytes Page：49 Pages

256M bits DDR SDRAM (64M words x 4 bits)

256M bits DDR SDRAM (64M words x 4 bits)

文件：441.61 Kbytes Page：49 Pages

256M bits DDR SDRAM (64M words x 4 bits)

文件：555.29 Kbytes Page：49 Pages

256M bits DDR SDRAM (64M words x 4 bits)

文件：441.61 Kbytes Page：49 Pages

256M bits DDR SDRAM (64M words x 4 bits)

文件：555.29 Kbytes Page：49 Pages

256M bits DDR SDRAM (64M words x 4 bits)

文件：441.61 Kbytes Page：49 Pages

256M bits DDR SDRAM (64M words x 4 bits)

文件：555.29 Kbytes Page：49 Pages

256M bits DDR SDRAM (64M words x 4 bits)

文件：555.29 Kbytes Page：49 Pages

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 25 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • The plastic package has Underwriters Laboratory Flammability Classification 94V-O. • Surge overload ratings to 300 Amperes .

IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES ● Plastic Case With Heatsink For Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● The plastic package has Underwriters Laboratory Flammability Classification 94V-O

Silicon NPN Transistor High Gain Audio Amplifier

Features: • Large Current Capacity (IC = 2A) • Adoption of MBIT Process • High DC Current Gain: hFE = 800 to 3200 • Low Collector–Emitter Saturation Voltage: VCE(sat)