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位置：首页 > IC中文资料 > ECS3808

型号 功能描述 生产厂家 企业 LOGO 操作
ECS3808

MOSFET

E-CMOS

飞虹高科

SMZG3808A

SURFACE MOUNT ZENER DIODE

Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering

GE

SMZG3808B

SURFACE MOUNT ZENER DIODE

Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering

GE

SMZJ3808

SURFACE MOUNT ZENER DIODE

Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering

GE

SMZJ3808A

SURFACE MOUNT ZENER DIODE

Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering

GE

SMZJ3808B

SURFACE MOUNT ZENER DIODE

Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering

GE

ECS3808产品属性

  • 类型

    描述

  • Configure：

    Dual

  • MOSFET TyEC：

    N+N

  • V DS(V)：

    30

  • V GS(V)：

    ±20

  • V th (V)：

    1.2/1.6/2.5

  • R DS(ON)(mΩ) max. at V GS =10V：

    8.6/11

  • GS =4.5V：

    May 12

  • Ciss(pF)：

    750

  • Coss (pF)：

    150

  • Crss(pF)：

    110

  • Qg (nC)=10V：

    16.6

  • Qgs (nC)：

    1.3

  • Qgd (nC)：

    4.5

  • Rg W：

    2.7

  • I D(A) TA=25 ℃：

    9

  • I D(A) TA=70 ℃：

    7.2

  • EC(W)TA=25 ℃：

    1.47

  • ESDDiode：

    X

  • Schokkty Diode：

    X

ECS3808芯片相关品牌

ECS3808规格书下载地址

ECS3808参数引脚图相关

ECS3808数据表相关新闻

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