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型号 功能描述 生产厂家 企业 LOGO 操作
ECS3807

MOSFET

E-CMOS

飞虹高科

Power Management Switching IC (with flash memory power switching function)

DESCRIPTION When data is written to or read from flash memory, it requires that the voltage at its power supply (VPP) be switched (to 12 V for writing and to 3.3 or 5.0 V for reading). The MB3807A is a power management switching IC, designed to be compatible with the PCMCIA digital controller, t

FUJITSU

富士通

SURFACE MOUNT ZENER DIODE

Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering

GE

SURFACE MOUNT ZENER DIODE

Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering

GE

SURFACE MOUNT ZENER DIODE

Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering

GE

SURFACE MOUNT ZENER DIODE

Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering

GE

ECS3807产品属性

  • 类型

    描述

  • Configure:

    Dual

  • MOSFET TyEC:

    P+P

  • V DS(V):

    -30

  • V GS(V):

    ±20

  • V th (V):

    1.2/1.6/2.5

  • R DS(ON)(mΩ) max. at V GS =10V:

    20/23

  • GS =4.5V:

    May 31

  • Ciss(pF):

    1250

  • Coss (pF):

    160

  • Crss(pF):

    90

  • Qg (nC)=4.5V:

    11

  • Qgs (nC):

    3.4

  • Qgd (nC):

    4.2

  • EAS(mJ):

    61

  • I D(A) Tc=25 ℃:

    7

  • I D(A) Tc=100 ℃:

    4.43

  • EC(W)Tc=25 ℃:

    2.1

  • ESDDiode:

    X

  • Schokkty Diode:

    X

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