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ECS2603

MOSFET

E-CMOS

飞虹高科

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 6 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Long lifetime, high reliability ● Thin side-view type package

PANASONIC

松下

2.8V PCS UPCONVERTER

Product Description The RF2603 is a upconverter/pre-driver designed for PCS systems. The device features single-ended IF and LO inputs and single-ended RF output for ease of interface. The RF2603 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and i

RFMD

威讯联合

6-CHANNEL SERIAL INTERFACE LOW-SIDE DRIVER

文件:243.77 Kbytes Page:17 Pages

TI

德州仪器

6-CHANNEL SERIAL INTERFACE LOW-SIDE DRIVER

文件:243.77 Kbytes Page:17 Pages

TI

德州仪器

6-CHANNEL SERIAL INTERFACE LOW-SIDE DRIVER

文件:243.77 Kbytes Page:17 Pages

TI

德州仪器

ECS2603产品属性

  • 类型

    描述

  • Configure:

    Single

  • MOSFET TyEC:

    P

  • V DS(V):

    -20

  • V GS(V):

    ±12

  • V th (V):

    0.3/0.6/1

  • GS =4.5V:

    6.5/8.5

  • GS =2.5V:

    9/12

  • GS =1.8V:

    12/17

  • Ciss(pF):

    4060

  • Coss (pF):

    520

  • Crss(pF):

    400

  • Qg (nC)=4.5V:

    44.4

  • Qgs (nC):

    7.2

  • Qgd (nC):

    10.2

  • I D(A) Tc=25 ℃:

    14

  • I D(A) Tc=100 ℃:

    8.8

  • EC(W)Tc=25 ℃:

    2

  • ESDDiode:

    X

  • Schokkty Diode:

    X

ECS2603数据表相关新闻