ECH83价格
参考价格:¥0.8450
型号:ECH8301 品牌:SANYO 备注:这里有ECH83多少钱,2026年最近7天走势,今日出价,今日竞价,ECH83批发/采购报价,ECH83行情走势销售排行榜,ECH83报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ECH83 | ECH83 文件:375.04 Kbytes Page:14 Pages | PHILIPS 飞利浦 | ||
ECH83 | ECH83 | ETC 知名厂家 | ETC | |
P-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. | SANYO 三洋 | |||
ECH8304 General-Purpose Switching Device Applications Features • Best suited for load switching. • Low ON-resistance. • 1.8V drive. | SANYO 三洋 | |||
General-Purpose Switching Device Features • Low ON-resistance. • 4V drive. | SANYO 三洋 | |||
5 to 25 V, VOUT = 1.2 to 22 V, 2-channel DC-DC Controller IC with Step down regulation FEATURES 2-channel DC-DC Step Down Regulator Circuit that employs Voltage Mode Switching Control System Internal reference voltage is within 2 accuracy Input Voltage Range : VCC: 5 V ~ 25 V Adjustable Output Voltage Range with external Resistor : 1.2 V ~ 22 V (Note) Adjustable Sw | PANASONIC 松下 | |||
P-Channel Silicon MOSFET General-Purpose Switching Device Features • Low ON-resistance. • 4V drive. | SANYO 三洋 | |||
P-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Best suited for load switching • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in | SANYO 三洋 | |||
P-Channel Power MOSFET P-Channel Power MOSFET –12V, –10A, 12.5mΩ, Single ECH8 Features • Best suited for load switching • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
P-Channel Power MOSFET P-Channel Power MOSFET –12V, –10A, 12.5mΩ, Single ECH8 Features • Best suited for load switching • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
P-Channel Power MOSFET Features • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
General-Purpose Switching Device Applications Features • 1.8V drive • Halogen free compliance • Protection diode in | SANYO 三洋 | |||
P-Channel Power MOSFET Features • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
P-Channel Power MOSFET Features • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • 4V drive • Halogen free compliance • Protection diode in | SANYO 三洋 | |||
P-Channel Power MOSFET Features • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
Single P-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements. Features • Low On-Resistance • 4V drive • ESD Diode-Protected Gate • Pb-Free, Halogen F | ONSEMI 安森美半导体 | |||
General-Purpose Switching Device Applications P-Channel Silicon MOSFET Features • Low ON-resistance • 4V drive • Halogen free compliance • Protection diode in | SANYO 三洋 | |||
Single P-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements. Features • Low On-Resistance • 4V drive • ESD Diode-Protected Gate • Pb-Free, Halogen F | ONSEMI 安森美半导体 | |||
Single P-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements. Features • Low On-Resistance • 4V drive • ESD Diode-Protected Gate • Pb-Free, Halogen F | ONSEMI 安森美半导体 | |||
P-Channel Power MOSFET Features • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in | SANYO 三洋 | |||
P-Channel Power MOSFET Features • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
ECH8304 | ONSEMI 安森美半导体 | |||
Medium Output MOSFETs | ONSEMI 安森美半导体 | |||
P-Channel Silicon MOSFET General-Purpose Switching Device 文件:40.45 Kbytes Page:4 Pages | SANYO 三洋 | |||
P-Channel Silicon MOSFET General-Purpose Switching Device 文件:40.45 Kbytes Page:4 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:44.08 Kbytes Page:4 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:314.77 Kbytes Page:7 Pages | SANYO 三洋 | |||
封装/外壳:8-SMD,扁平引线 包装:管件 描述:MOSFET P-CH 12V 10A ECH8 分立半导体产品 晶体管 - FET,MOSFET - 单个 | ONSEMI 安森美半导体 | |||
General-Purpose Switching Device Applications 文件:314.77 Kbytes Page:7 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:68.83 Kbytes Page:4 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:68.83 Kbytes Page:4 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:113.82 Kbytes Page:7 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:113.82 Kbytes Page:7 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:417.84 Kbytes Page:7 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:417.84 Kbytes Page:7 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:421.6 Kbytes Page:7 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:421.6 Kbytes Page:7 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:114.63 Kbytes Page:7 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:114.63 Kbytes Page:7 Pages | SANYO 三洋 |
ECH83产品属性
- 类型
描述
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Channel Polarity:
P-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
-12
- VGS Max (V):
10
- VGS(th) Max (V):
1.3
- ID Max (A):
-9.5
- PD Max (W):
1.6
- RDS(on) Max @ VGS = 2.5 V(mΩ):
26
- RDS(on) Max @ VGS = 4.5 V(mΩ):
16
- RDS(on) Max @ VGS = 10 V(mΩ):
0.016
- Qg Typ @ VGS = 10 V (nC):
18
- Ciss Typ (pF):
1780
- Package Type:
SOT-28 FL/ECH-8
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
SOT-28 |
7850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ONSEMI/安森美 |
25+ |
ECH-8 |
20300 |
ONSEMI/安森美原装特价ECH8315即刻询购立享优惠#长期有货 |
|||
ON/安森美 |
2025+ |
ECH-8 |
5000 |
原装进口价格优 请找坤融电子! |
|||
ON |
25+ |
ECH-8 |
6800 |
全新原装公司现货低价 |
|||
ON/安森美 |
1701 |
ECH-8 |
195 |
原装现货 价格优势 |
|||
ON/安森美 |
24+ |
ECH-8 |
195 |
原装优势现货 |
|||
ON12 |
25+ |
ECH-8 |
20000 |
北京 |
|||
SANYO |
1632+ |
SOT-3-8 |
910 |
上传都是百分之百进口原装现货 |
|||
ON(安森美) |
2511 |
9550 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
||||
ON/安森美 |
2022+ |
ECH-8 |
195 |
只做进口原装正品现货,开13%增值税票! |
ECH83规格书下载地址
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