30 W 925.960 MHz RF POWER AMPLIFIER

The RF Line UHF Silicon FET Power Amplifier Designed specifically for the Pan European Digital Extended EGSM base station applications at 925 – 960 MHz. The MHW930 operates from a 26 volt supply and requires 60 mW of RF input power. • Specified 26 Volt and 25 °C Characteristics:

Infrared LED

Infrared LED

LOW VOLTAGE PLL CLOCK DRIVER

Low Voltage PLL Clock Driver The MPC930/931 is a 3.3V compatible, PLL based clock driver device targeted for high performance clock applications. With output frequencies of up to 150MHz and output skews of 300ps the MPC930/931 is ideal for the most demanding clock distribution designs. The

TMOS Switching

TMOS Switching N–Channel — Enhancement

SILICON 12V HYPERABRUPT VARACTOR DIODES

Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature

15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output

15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output

15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output

15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output

15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output

15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output

15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output

15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output

Linear Integrated Circuit BiMOS Operational Amp