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型号 功能描述 生产厂家 企业 LOGO 操作
ECF17N80T

MOSFET

E-CMOS

飞虹高科

HiPerFET Power MOSFETs Q-Class

HiPerFET™ Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features • IXYS advanced low Qg process • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Fast switching • Molding epoxies meet UL 94 V-0 flammabili

IXYS

艾赛斯

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

HiPerFET Power MOSFETs Q-Class

HiPerFET™ Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features • IXYS advanced low Qg process • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Fast switching • Molding epoxies meet UL 94 V-0 flammabili

IXYS

艾赛斯

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power

VISHAYVishay Siliconix

威世威世科技公司

EF Series Power MOSFET With Fast Body Diode

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power

VISHAYVishay Siliconix

威世威世科技公司

ECF17N80T产品属性

  • 类型

    描述

  • Configuration:

    Single

  • MOSFET TyEC:

    N

  • V DS(V):

    800

  • V GS(V):

    ±30

  • V th (V):

    2.5/3.5/4.5

  • R DS(ON)(mΩ) max. at V GS =10V:

    260/350

  • Ciss(pF):

    1650

  • Coss (pF):

    580

  • Crss(pF):

    25

  • Qg (nC)=10V:

    57.2

  • Qgs(nC):

    6.3

  • Qgd(nC):

    27.4

  • Rg W:

    1.36

  • EAS(mJ):

    1014

  • I D(A) Tc=25 ℃:

    17

  • I D(A) Tc=100 ℃:

    10.7

  • EC(W)Tc=25 ℃:

    55

  • ESDDiode:

    X

  • SchokktyDiode:

    X

更新时间:2026-5-22 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NIEC
2016+
TO252
6000
只做原装,假一罚十,公司可开17%增值税发票!
NIEC
2026+
TO252
676
原装正品 假一罚十!
MICRON/美光
26+
NA
20000
美光专营原装正品
EXIC
23+
NA
384
专做原装正品,假一罚百!
EXIC
23+
1400
NIEC/英达
25+
TO-252
1093
全新原装正品支持含税
MICRON/美光
23+
NA
20000
原厂授权一级代理,专业海外优势订货,价格优势、品种
MURATA/村田
2450+
SMD
9850
只做原厂原装正品现货或订货假一赔十!
MURATA/村田
25+
SMD
880000
明嘉莱只做原装正品现货
KYOCERA
21+
-
101
只做原装鄙视假货15118075546

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