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ECD6912

MOSFET

E-CMOS

飞虹高科

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with c

FAIRCHILD

仙童半导体

Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

FAIRCHILD

仙童半导体

Single-Slot ACPI CardBus Controller

[O2Micro] GENERAL DESCRIPTION The OZ6912 is an ACPI and PC98/99 Logo Certified, high performance, single slot PC Card controller with a synchronous 32-bit bus master/target PCI interface. This PC Card to PCI bridge host controller is compliant with the 2000 PC Card Standard. This standard incorp

ETCList of Unclassifed Manufacturers

未分类制造商

Single-Slot ACPI CardBus Controller

[O2Micro] GENERAL DESCRIPTION The OZ6912 is an ACPI and PC98/99 Logo Certified, high performance, single slot PC Card controller with a synchronous 32-bit bus master/target PCI interface. This PC Card to PCI bridge host controller is compliant with the 2000 PC Card Standard. This standard incorp

ETCList of Unclassifed Manufacturers

未分类制造商

Single-Slot ACPI CardBus Controller

[O2Micro] GENERAL DESCRIPTION The OZ6912 is an ACPI and PC98/99 Logo Certified, high performance, single slot PC Card controller with a synchronous 32-bit bus master/target PCI interface. This PC Card to PCI bridge host controller is compliant with the 2000 PC Card Standard. This standard incorp

ETCList of Unclassifed Manufacturers

未分类制造商

ECD6912产品属性

  • 类型

    描述

  • Configuration:

    Single

  • MOSFET TyEC:

    N

  • V DS(V):

    60

  • V GS(V):

    ±20

  • V th (V):

    1.2/1.8/2.5

  • R DS(ON)(mΩ) max. at V GS =10V:

    60/75

  • V GS =4.5V:

    70/90

  • Ciss(pF):

    500

  • Coss (pF):

    45

  • Crss(pF):

    16

  • Qg (nC)=10V:

    9.3

  • Qgs(nC):

    2.1

  • Qgd(nC):

    1.8

  • Rg W:

    2

  • EAS(mJ):

    25

  • I D(A) Tc=25 ℃:

    11

  • I D(A) Tc=100 ℃:

    7

  • EC(W)Tc=25 ℃:

    25

  • ESDDiode:

    X

  • SchokktyDiode:

    X

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