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型号 功能描述 生产厂家 企业 LOGO 操作
ECD3959

MOSFET

E-CMOS

飞虹高科

DMOS FULL-BRIDGE PWM MOTOR DRIVER

FEATURES ■ ±3 A, 50 V Output Rating ■ Low rDS(on) Outputs (270 mΩ, Typical) ■ Mixed, Fast, and Slow Current-Decay Modes ■ Synchronous Rectification for Low Power Dissipation ■ Internal UVLO and Thermal-Shutdown Circuitry ■ Crossover-Current Protection ■ Internal Oscillator for Digital PWM T

ALLEGRO

DMOS FULL-BRIDGE PWM MOTOR DRIVER

FEATURES ■ ±3 A, 50 V Output Rating ■ Low rDS(on) Outputs (270 mΩ, Typical) ■ Mixed, Fast, and Slow Current-Decay Modes ■ Synchronous Rectification for Low Power Dissipation ■ Internal UVLO and Thermal-Shutdown Circuitry ■ Crossover-Current Protection ■ Internal Oscillator for Digital PWM T

ALLEGRO

DMOS FULL-BRIDGE PWM MOTOR DRIVER

FEATURES ■ ±3 A, 50 V Output Rating ■ Low rDS(on) Outputs (270 mΩ, Typical) ■ Mixed, Fast, and Slow Current-Decay Modes ■ Synchronous Rectification for Low Power Dissipation ■ Internal UVLO and Thermal-Shutdown Circuitry ■ Crossover-Current Protection ■ Internal Oscillator for Digital PWM T

ALLEGRO

DMOS FULL-BRIDGE PWM MOTOR DRIVER

FEATURES ■ ±3 A, 50 V Output Rating ■ Low rDS(on) Outputs (270 mΩ, Typical) ■ Mixed, Fast, and Slow Current-Decay Modes ■ Synchronous Rectification for Low Power Dissipation ■ Internal UVLO and Thermal-Shutdown Circuitry ■ Crossover-Current Protection ■ Internal Oscillator for Digital PWM T

ALLEGRO

DMOS FULL-BRIDGE PWM MOTOR DRIVER

FEATURES ■ ±3 A, 50 V Output Rating ■ Low rDS(on) Outputs (270 mΩ, Typical) ■ Mixed, Fast, and Slow Current-Decay Modes ■ Synchronous Rectification for Low Power Dissipation ■ Internal UVLO and Thermal-Shutdown Circuitry ■ Crossover-Current Protection ■ Internal Oscillator for Digital PWM T

ALLEGRO

ECD3959产品属性

  • 类型

    描述

  • Configuration:

    Single

  • MOSFET TyEC:

    P

  • V DS(V):

    -30

  • V GS(V):

    ±20

  • V th (V):

    1.2/1.6/2.2

  • R DS(ON)(mΩ) max. at V GS =10V:

    3.5/4.5

  • V GS =4.5V:

    5/7

  • Ciss(pF):

    6220

  • Coss (pF):

    782

  • Crss(pF):

    412

  • Qg (nC)=10V:

    108

  • Qgs(nC):

    15

  • Qgd(nC):

    17.4

  • I D(A) Tc=25 ℃:

    85

  • I D(A) Tc=100 ℃:

    54

  • EC(W)Tc=25 ℃:

    104

  • ESDDiode:

    X

  • SchokktyDiode:

    X

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