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型号 功能描述 生产厂家 企业 LOGO 操作
ECD2314

MOSFET

E-CMOS

飞虹高科

Silicon PNP Transistor High Current, High Speed Switch (Compl to NTE2304)

Description: The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications. Features: • Low Collector–Emitter Saturation Voltage • Wide ASO and Resist

NTE

4-Channel Input Audio Processor IC?

Description PT2314 is a four-channel input digital audio processor utilizing CMOS Technology. Volume, Bass, Treble and Balance are incorporated into a single chip. Loudness Function and Selectable Input Gain are also provided to build a highly effective electronic audio processor having the highe

PTC

普诚科技

4-Channel Input Audio Processor IC?

Description PT2314 is a four-channel input digital audio processor utilizing CMOS Technology. Volume, Bass, Treble and Balance are incorporated into a single chip. Loudness Function and Selectable Input Gain are also provided to build a highly effective electronic audio processor having the highe

PTC

普诚科技

GENERAL PURPOSE LOW NOISE AMPLIFIER

Product Description The RF2314 is a general purpose, low-cost, high performance amplifier designed for operation from a 2.7V to 6V supply with low current consumption. The circuit configuration with resistive feedback allows for broadband cascadable amplification. Feedback with capacitive compens

RFMD

威讯联合

GENERAL PURPOSE LOW NOISE AMPLIFIER

Product Description The RF2314 is a general purpose, low-cost, high performance amplifier designed for operation from a 2.7V to 6V supply with low current consumption. The circuit configuration with resistive feedback allows for broadband cascadable amplification. Feedback with capacitive compens

RFMD

威讯联合

ECD2314产品属性

  • 类型

    描述

  • Configuration:

    Single

  • MOSFET TyEC:

    N

  • V DS(V):

    20

  • V GS(V):

    ±10

  • V th (V):

    0.4/0.6/1

  • V GS =4.5V:

    21/25

  • V GS =2.5V:

    28/36

  • V GS =1.8V:

    39/51

  • Ciss(pF):

    535

  • Coss (pF):

    60

  • Crss(pF):

    34

  • Qg (nC)=4.5V:

    7.7

  • Qgs(nC):

    0.9

  • Qgd(nC):

    2.4

  • I D(A) Tc=25 ℃:

    20

  • I D(A) Tc=100 ℃:

    12

  • EC(W)Tc=25 ℃:

    20.8

  • ESDDiode:

    X

  • SchokktyDiode:

    X

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