Diffused Junction Type Silicon Diode Variable Capacitance Diode for UHF Band VCO

Diffused Junction Type Silicon Diode Features • Low series resistance. rs=0.55Ω typ. • Ultraminiature (1008size) and (0.6mm) leadless package. Applications • 0.8 to 1.9GHz band VCO applications.

Diffused Junction Type Silicon Diode Variable Capacitance Diode for UHF Band VCO

5 TO 6 WATT DC-DC CONVERTERS

文件：725.43 Kbytes Page：1 Pages

COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS

MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes

Power MOSFET 2 Am, 30 V

文件：57.85 Kbytes Page：3 Pages

Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual

文件：116.72 Kbytes Page：10 Pages