| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EC2612 | 40GHz Super Low Noise PHEMT Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to | UMS |   | |
EC2612 | 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description\nThe EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to very 0.8dB minimum noise figure @ 18GHz\n1.5dB minimum noise figure @ 40GHz\n12dB associated gain @ 18GHz\n9.5dB associated gain @ 40GHz; | UMS | | |
EC2612 | 40GHz Super Low Noise pHEMT 文件：140.18 Kbytes Page：8 Pages | UMS | | |
40GHz Super Low Noise pHEMT \n The EC2612-99F is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology.\n Gate width is 120µm and the 0.15µm. T-shaped aluminium gate features low resistance and excellent reliability.\n The device shows a very high transconductance which lead | UMS | | ||
40GHz Super Low Noise PHEMT Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to | UMS | | ||
40GHz Super Low Noise PHEMT Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to | UMS | | ||
40GHz Super Low Noise pHEMT 文件：140.18 Kbytes Page：8 Pages | UMS | | ||
400mA Sub-miniature, Programmable, Step-Down DC-DC Converter for Ultra Low-Voltage Circuits 文件：2.31886 Mbytes Page：19 Pages | NSC 国半 | | ||
400mA Sub-miniature, Programmable, Step-Down DC-DC Converter for Ultra Low-Voltage Circuits 文件：6.03566 Mbytes Page：19 Pages | NSC 国半 | | ||
400mA Sub-miniature, Programmable, Step-Down DC-DC Converter for Ultra Low-Voltage Circuits 文件：2.31886 Mbytes Page：19 Pages | NSC 国半 | | ||
400mA Sub-miniature, Programmable, Step-Down DC-DC Converter for Ultra Low-Voltage Circuits 文件：2.31886 Mbytes Page：19 Pages | NSC 国半 | | ||
400mA Sub-miniature, Programmable, Step-Down DC-DC Converter for Ultra Low-Voltage Circuits 文件：2.31886 Mbytes Page：19 Pages | NSC 国半 | |
EC2612产品属性
- 类型
描述
- RF Bandwidth (GHz) min-max：
DC - 40
- Noise Figure (dB)：
1.5
- Case：
Die
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ECM |
24+ |
SOP-8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ECM |
2026+ |
SOP-8 |
19900 |
原装正品 假一罚十! |
|||
UMS |
25+ |
5000 |
原装优势现货 |
||||
ECM |
22+ |
SOP-8 |
20000 |
公司只有原装 品质保证 |
|||
UMS |
24+ |
SMD |
1680 |
UMS专营进口原装现货假一赔十 |
|||
UMS |
2450+ |
NA |
9485 |
只做原装正品现货或订货假一赔十! |
|||
ECM |
SOP-8 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ECM |
24+ |
SOP-8 |
40000 |
||||
ECM |
2402+ |
SOP-8 |
8324 |
原装正品!实单价优! |
|||
ECM |
02+ |
SOP-8 |
19999 |
全新 发货1-2天 |
EC2612规格书下载地址
EC2612参数引脚图相关
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EC2612数据表相关新闻
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2019-9-23EC1086-低压差稳压器
概述 该EC1086是一种低压差正电压系列有了一个最大降稳压器在1.5V1.5A的负载电流。在1.5V的EC1086是可用，1.8V，2.5V，3V，3.3V，和5.0V版本。固定版本整合调整电阻。它也可在可调版本，它可以设置只有两个输出电压外部电阻。该系列具有片上热关断。它还包括一个带隙基准和电流限制电路。该EC1086系列提供的标准包TO -263 -3L，TO -220，SOT- 223和TO- 252。 特点 可在1.5V，1.8V，2.5V，3V，3.3V，5.0V和 可调版本 低压差电压：在典型的1.3V
2013-1-30
DdatasheetPDF页码索引
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