InGaP HBT Gain Block

[WJCI] Product Description The EC1019 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1000 MHz, the EC1019 typically provides 20 dB of gain, +34 dBm Output IP3, and +19 dBm P1dB. Product Features ● DC – 4 GHz ● +19 dBm P1dB at 1

InGaP HBT Gain Block

Product Description The EC1019 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1000 MHz, the EC1019 typically provides 20 dB of gain, +34 dBm Output IP3, and +19 dBm P1dB. Product Features ● DC – 4 GHz ● +19 dBm P1dB at 1 GHz ● +34

InGaP HBT Gain Block

Product Description\nThe EC1019B is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 2000 MHz, the EC1019B typically provides 18.5 dB of gain, +31 dBm Output IP3, and +19.5 dBm P1dB.\nThe EC1019B consists of Darlington pair amplifiers using th • DC – 4 GHz\n• +19.5 dBm P1dB at 2 GHz\n• +31 dBm OIP3 at 2 GHz\n• 18.5 dB Gain at 2 GHz\n• 2.8 dB Noise Figure\n• Available in Lead-free / green SOT-89 Package Style\n• Internally matched to 50 ΩApplications\n• Mobile Infrastructure\n• CATV / FTTX\n• W-LAN / ISM\n• RFID\n• WiMAX / WiBro ;

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1019AM BICMOS device integrates prescalers, a programmable divider, and phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1019M BICMOS device integrates prescalers, a programmable divider, and phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V

METAL GATE RF SILICON FET

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METAL GATE RF SILICON FET

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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