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EB201D

High Cell Density MOSFETs Low On-Resistance Affords New Design Options

High Cell Density MOSFETs Low On–Resistance Affords New Design Options Just a few years ago an affordable 60 V, 10 mΩ power transistor was a dream. After all, 10 mΩ is the resistance of about 20 cm of #22 gauge wire. Today a sub–10 mΩ power MOSFET is not only available, it is housed in a standar

ONSEMI

安森美半导体

Operational Amplifiers

A general purpose operational amplifier that allows the user to choose the compensation capacitor best suited to his needs. With proper compensation, summing amplifier slew rates to 10 V/µs can be obtained. • Low Input Offset Current: 20 nA Maximum Over Temperature Range • External Frequency Com

MOTOROLA

摩托罗拉

Operational Amplifiers

A general purpose operational amplifier that allows the user to choose the compensation capacitor best suited to his needs. With proper compensation, summing amplifier slew rates to 10 V/µs can be obtained. • Low Input Offset Current: 20 nA Maximum Over Temperature Range • External Frequency Com

MOTOROLA

摩托罗拉

Operational Amplifiers

A general purpose operational amplifier that allows the user to choose the compensation capacitor best suited to his needs. With proper compensation, summing amplifier slew rates to 10 V/µs can be obtained. • Low Input Offset Current: 20 nA Maximum Over Temperature Range • External Frequency Com

MOTOROLA

摩托罗拉

Operational Amplifiers

文件:509.25 Kbytes Page:17 Pages

NSC

国半

Operational Amplifiers

文件:509.25 Kbytes Page:17 Pages

NSC

国半

EB201D产品属性

  • 类型

    描述

  • 型号

    EB201D

  • 制造商

    ONSEMI

  • 制造商全称

    ON Semiconductor

  • 功能描述

    High Cell Density MOSFETs Low On-Resistance Affords New Design Options

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