Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized, Half-Bridge Module

Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low Inductance (6.7 nH) Design • Implements Conduction Optimized Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate VDS 1200 V IDS 450 A System Benef

XM3 Half-Bridge Power Module Family

1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module

Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low Inductance (6.7 nH) Design • Implements Conduction Optimized Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate VDS 1200 V IDS 450 A System Benef

1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module

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