N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 62A, RDS(ON) = 19mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. Synchronous rectification for AC-DC SMPS. Applications Motor control for 48V-80V systems . Isolated

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 62A, RDS(ON) = 19mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. Synchronous rectification for AC-DC SMPS. Applications Motor control for 48V-80V systems . Isolated

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 150V RDSON (MAX.) 65mΩ ID 20A UIS, Rg 100 Tested Pb‐Free Lead Plating

150V N-Channel MOSFETs

Features - 150V,65A, RDS(ON) =16mΩ @VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - Networking - Load Switch - LED applications - Quick Charger

N-Channel Enhancement Mode Power MOSFET

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