位置：首页 > IC中文资料第977页 > E28F800B5
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex | INTEL 英特尔 |   | ||
5 VOLT BOOT BLOCK FLASH MEMORY SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex | INTEL 英特尔 | | ||
5 VOLT BOOT BLOCK FLASH MEMORY SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex | INTEL 英特尔 | | ||
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex | INTEL 英特尔 | | ||
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex | INTEL 英特尔 | | ||
5 VOLT BOOT BLOCK FLASH MEMORY SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex | INTEL 英特尔 | | ||
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex | INTEL 英特尔 | | ||
5 VOLT BOOT BLOCK FLASH MEMORY SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex | INTEL 英特尔 | | ||
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex | INTEL 英特尔 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F008B5 (x8) and MT28F800B5 (x16/x8) are nonvolatile, electrically block-erasable (Flash), programmable read-only memories containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing or erasing the device is done with a 5V VPP v | MICRON 美光 | |
E28F800B5产品属性
- 类型
描述
- 型号
E28F800B5
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTEL/英特尔 |
24+ |
SOP |
11783 |
只做原装 公司现货库存 |
|||
INTEL |
24+ |
TSSOP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INTEL/英特尔 |
2026+ |
SOP |
996880 |
只做原装,欢迎来电资询 |
|||
INTEL |
00+ |
TSOP |
1119 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INTEL |
24+ |
TSSOP |
8985 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
INTEL |
24+/25+ |
111 |
原装正品现货库存价优 |
||||
INTEL |
24+ |
TSSOP |
6000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
INTEL |
00+ |
TSOP |
2145 |
全新原装进口自己库存优势 |
|||
INTEL |
20+ |
SOP |
2960 |
诚信交易大量库存现货 |
|||
INTEL |
2023+ |
TSOP |
50000 |
原装现货 |
E28F800B5规格书下载地址
E28F800B5参数引脚图相关
- fml22s
- flotherm
- finder继电器
- fc114
- fangtek
- f83
- f411
- f4031
- f338
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDA
- E2S-Q25
- E2S-Q24
- E2S-Q23
- E2S-Q22
- E2S-Q21
- E2S-Q16
- E2S-Q15
- E2S-Q14
- E2S-Q13
- E2S-Q12
- E2S-Q11
- E2R-A01
- E2PBG
- E2N65
- E2N60
- E2K-C
- E2EX2E1
- E2-CL
- E2C-EDA
- E2C-C1A
- E290812
- E29061-000
- E2906
- E290484
- E290480
- E28X450U
- E28F800CV-T80
- E28F800CVT70
- E28F800CV-T60
- E28F800CV-B80
- E28F800CVB70
- E28F800CV-B60
- E28F800BV-T80
- E28F800BV-T60
- E28F800BV-B80
- E28F800BV-B60
- E28F800B5T90
- E28F800B5T70
- E28F800B5B90
- E28F800B5B70
- E28F640J3C-150
- E28F640J3C-125
- E28F640J3C-120
- E28F640J3C-115
- E28F640J3C-110
- E28F640J3A-150
- E28F640J3A-125
- E28F640J3A-120
- E28F640J3A120
- E28F640J3A-115
- E28F640J3A-110
- E28F400CV-T80
- E28F400CVT80
- E28F400CV-T60
- E28F400CVT60
- E28F400CV-B80
- E28F400CVB80
- E28F400CV-B60
- E28F400CVB60
- E28F400BX-T80
- E288CC
- E2801LF
- E2801
- E2799
- E2791
- E2747LF
- E2747
- E-272
- E-2708
- E-2702
- E2688A
- E2681A
- E2667B
- E2666B
- E2625A
- E25A2CS
- E25A2CR
- E2560
- E2544S
- E2542S
E28F800B5数据表相关新闻
E220-400M22S 是亿佰特（EBYTE）推出的一款工作于400MHz 频段的 LoRa 无线通信模块，基于 Semtech LoRa 技术设计，聚焦远距离传输、低功耗、强抗干扰特性，适用于工业物联网、智能农业、智慧城市等场景。
E220-400M22S 亿佰特（EBYTE）
2025-11-4E22-400T30S 是由亿佰特（EBYTE）推出的一款基于LoRa 扩频技术的无线通信模块，工作于400MHz 频段，主打远距离传输、低功耗、强抗干扰特性，适用于物联网（IoT）、远程数据采集、工业控制等场景。
E22-400T30S 是亿佰特（EBYTE） 800000PCS
2025-11-4E2AM12LS04M1B1
E2AM12LS04M1B1
2022-9-7E2A-S12KS04-WP-B12M原装特价现货出售
E2A-S12KS04-WP-B12M
2022-7-11E2EL-X8F1-DM1C
深圳科雨电子有限公司，联系人：卢小姐 手机：18975515225 原装正品 大量现货，有需要的可以联系我 QQ:97877805 微信：wei555222777
2019-8-14E211ATF-缓冲器/驱动器...
描述 该Edge211是一个双三元司机在制造 电压CMOS全过程。它是专为自动 测试设备和仪器在成本，功能 密度和电源都处于溢价。 每个tristatable驱动程序是能够产生3个级别- 一为逻辑高，为逻辑低之一，对于任何一 终止电压或特殊的编程电压。 该Edge211的目的是提供一个极低的泄漏， 低成本，低功耗，小封装，驱动解决方案 100兆赫及以下针电子应用。 特点 •100 MHz运行 •12V的
2013-3-5
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
